Quantum corrections to the resistance of Mo/Si multilayers

E. I. Buchstab; A. V. Butenko; N. Ya Fogel; V. G. Cherkasova; R. L. Rosenbaum

doi:10.1103/physrevb.50.10063

Quantum corrections to the resistance of Mo/Si multilayers

E. I. Buchstab, A. V. Butenko, N. Ya Fogel, V. G. Cherkasova, R. L. Rosenbaum

Department of Physics

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Abstract

We report on resistance and magnetoresistance measurements in multilayer Mo/Si samples at temperatures of 1.5-300 K and magnetic fields up to 6 T. The temperature dependence of the conductivity can be entirely described by quantum interference effects. The experimental results are compared with calculations of the quantum corrections due to weak localization, electron-electron interactions, and supeconducting fluctuations. The resistance shows a crossover from two-dimensional (2D) to 3D behavior when the temperature is increased.

Original language	English
Pages (from-to)	10063-10068
Number of pages	6
Journal	Physical Review B
Volume	50
Issue number	14
DOIs	https://doi.org/10.1103/physrevb.50.10063
State	Published - 1994

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@article{d6ee9bf79de8433191eaa24a946ca2f9,

title = "Quantum corrections to the resistance of Mo/Si multilayers",

abstract = "We report on resistance and magnetoresistance measurements in multilayer Mo/Si samples at temperatures of 1.5-300 K and magnetic fields up to 6 T. The temperature dependence of the conductivity can be entirely described by quantum interference effects. The experimental results are compared with calculations of the quantum corrections due to weak localization, electron-electron interactions, and supeconducting fluctuations. The resistance shows a crossover from two-dimensional (2D) to 3D behavior when the temperature is increased.",

author = "Buchstab, {E. I.} and Butenko, {A. V.} and Fogel, {N. Ya} and Cherkasova, {V. G.} and Rosenbaum, {R. L.}",

year = "1994",

doi = "10.1103/physrevb.50.10063",

language = "אנגלית",

volume = "50",

pages = "10063--10068",

journal = "Physical Review B",

issn = "0163-1829",

publisher = "American Physical Society",

number = "14",

}

TY - JOUR

T1 - Quantum corrections to the resistance of Mo/Si multilayers

AU - Buchstab, E. I.

AU - Butenko, A. V.

AU - Fogel, N. Ya

AU - Cherkasova, V. G.

AU - Rosenbaum, R. L.

PY - 1994

Y1 - 1994

N2 - We report on resistance and magnetoresistance measurements in multilayer Mo/Si samples at temperatures of 1.5-300 K and magnetic fields up to 6 T. The temperature dependence of the conductivity can be entirely described by quantum interference effects. The experimental results are compared with calculations of the quantum corrections due to weak localization, electron-electron interactions, and supeconducting fluctuations. The resistance shows a crossover from two-dimensional (2D) to 3D behavior when the temperature is increased.

AB - We report on resistance and magnetoresistance measurements in multilayer Mo/Si samples at temperatures of 1.5-300 K and magnetic fields up to 6 T. The temperature dependence of the conductivity can be entirely described by quantum interference effects. The experimental results are compared with calculations of the quantum corrections due to weak localization, electron-electron interactions, and supeconducting fluctuations. The resistance shows a crossover from two-dimensional (2D) to 3D behavior when the temperature is increased.

UR - http://www.scopus.com/inward/record.url?scp=0000292107&partnerID=8YFLogxK

U2 - 10.1103/physrevb.50.10063

DO - 10.1103/physrevb.50.10063

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0000292107

SN - 0163-1829

VL - 50

SP - 10063

EP - 10068

JO - Physical Review B

JF - Physical Review B

IS - 14

ER -

Quantum corrections to the resistance of Mo/Si multilayers

Abstract

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