Quantum corrections to the resistance of Mo/Si multilayers

E. I. Buchstab, A. V. Butenko, N. Ya Fogel, V. G. Cherkasova, R. L. Rosenbaum

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


We report on resistance and magnetoresistance measurements in multilayer Mo/Si samples at temperatures of 1.5-300 K and magnetic fields up to 6 T. The temperature dependence of the conductivity can be entirely described by quantum interference effects. The experimental results are compared with calculations of the quantum corrections due to weak localization, electron-electron interactions, and supeconducting fluctuations. The resistance shows a crossover from two-dimensional (2D) to 3D behavior when the temperature is increased.

Original languageEnglish
Pages (from-to)10063-10068
Number of pages6
JournalPhysical Review B
Issue number14
StatePublished - 1994


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