Quantum corrections to the magnetoconductivity of surface states in three-dimensional topological insulators

  • Gang Shi
  • , Fan Gao
  • , Zhilin Li
  • , Rencong Zhang
  • , Igor Gornyi
  • , Dmitri Gutman
  • , Yongqing Li

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

The interplay between quantum interference, electron-electron interaction (EEI), and disorder is one of the central themes of condensed matter physics. Such interplay can cause high-order magnetoconductance (MC) corrections in semiconductors with weak spin-orbit coupling (SOC). However, it remains unexplored how the magnetotransport properties are modified by the high-order quantum corrections in the electron systems of symplectic symmetry class, which include topological insulators (TIs), Weyl semimetals, graphene with negligible intervalley scattering, and semiconductors with strong SOC. Here, we extend the theory of quantum conductance corrections to two-dimensional (2D) electron systems with the symplectic symmetry, and study experimentally such physics with dual-gated TI devices in which the transport is dominated by highly tunable surface states. We find that the MC can be enhanced significantly by the second-order interference and the EEI effects, in contrast to the suppression of MC for the systems with orthogonal symmetry. Our work reveals that detailed MC analysis can provide deep insights into the complex electronic processes in TIs, such as the screening and dephasing effects of localized charge puddles, as well as the related particle-hole asymmetry.

Original languageEnglish
Article number2596
Number of pages8
JournalNature Communications
Volume14
Issue number1
DOIs
StatePublished - 5 May 2023

Bibliographical note

Publisher Copyright:
© 2023, The Author(s).

Funding

We are grateful to Zhichuan Wang for assistance in numerical simulations, and I. Burmistrov, G. Minkov, P. Ostrovsky, H. Y. Xie, and Y. Xu for valuable discussions. Y.L. acknowledges financial support by the National Natural Science Foundation of China (Grant No. 11961141011), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB28000000), and the National Key Research and Development Program of China (Grants No. 2016YFA0300600 and No. 2022YFA1403403). D.G. acknowledges funding support by ISF-China 3119/19 and ISF 1355/20. Z.L. acknowledges support from National Natural Science Foundation of China (Grant No. 12204520) and the Youth Innovation Promotion Association of the Chinese Academy of Sciences (Grant No. 2021008).

FundersFunder number
ISF-China3119/19, ISF 1355/20, 12204520
National Natural Science Foundation of China11961141011
Chinese Academy of SciencesXDB28000000
Youth Innovation Promotion Association of the Chinese Academy of Sciences2021008
National Key Research and Development Program of China2016YFA0300600, 2022YFA1403403

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