Abstract
The interplay between quantum interference, electron-electron interaction (EEI), and disorder is one of the central themes of condensed matter physics. Such interplay can cause high-order magnetoconductance (MC) corrections in semiconductors with weak spin-orbit coupling (SOC). However, it remains unexplored how the magnetotransport properties are modified by the high-order quantum corrections in the electron systems of symplectic symmetry class, which include topological insulators (TIs), Weyl semimetals, graphene with negligible intervalley scattering, and semiconductors with strong SOC. Here, we extend the theory of quantum conductance corrections to two-dimensional (2D) electron systems with the symplectic symmetry, and study experimentally such physics with dual-gated TI devices in which the transport is dominated by highly tunable surface states. We find that the MC can be enhanced significantly by the second-order interference and the EEI effects, in contrast to the suppression of MC for the systems with orthogonal symmetry. Our work reveals that detailed MC analysis can provide deep insights into the complex electronic processes in TIs, such as the screening and dephasing effects of localized charge puddles, as well as the related particle-hole asymmetry.
| Original language | English |
|---|---|
| Article number | 2596 |
| Number of pages | 8 |
| Journal | Nature Communications |
| Volume | 14 |
| Issue number | 1 |
| DOIs | |
| State | Published - 5 May 2023 |
Bibliographical note
Publisher Copyright:© 2023, The Author(s).
Funding
We are grateful to Zhichuan Wang for assistance in numerical simulations, and I. Burmistrov, G. Minkov, P. Ostrovsky, H. Y. Xie, and Y. Xu for valuable discussions. Y.L. acknowledges financial support by the National Natural Science Foundation of China (Grant No. 11961141011), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB28000000), and the National Key Research and Development Program of China (Grants No. 2016YFA0300600 and No. 2022YFA1403403). D.G. acknowledges funding support by ISF-China 3119/19 and ISF 1355/20. Z.L. acknowledges support from National Natural Science Foundation of China (Grant No. 12204520) and the Youth Innovation Promotion Association of the Chinese Academy of Sciences (Grant No. 2021008).
| Funders | Funder number |
|---|---|
| ISF-China | 3119/19, ISF 1355/20, 12204520 |
| National Natural Science Foundation of China | 11961141011 |
| Chinese Academy of Sciences | XDB28000000 |
| Youth Innovation Promotion Association of the Chinese Academy of Sciences | 2021008 |
| National Key Research and Development Program of China | 2016YFA0300600, 2022YFA1403403 |