Quantum coherence phenomenon in disordered Bi2SeTe2 topological single crystal: Effect of annealing

E. P. Amaladass, T. R. Devidas, Shilpam Sharma, Awadhesh Mani

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Abstract

We report a comparative magnetotransport study on pristine and annealed Bi2SeTe2 single crystals. The pristine sample shows a metallic trend from 300 to 180 K, and an insulating behavior for T < 180 K, whereas the annealed sample exhibits an insulating nature in the entire 4.2-300 K temperature range. Magnetoresistance (MR) of pristine and annealed samples reveals contrasting behaviour as a function of temperature (T) and magnetic field (B). At 4.2 K, the pristine sample shows weak antilocalization (WAL) behavior at low fields and transforms to weak localization (WL) behavior (negative MR) for B > 2.5 T. Further, the quantum MR behaviours seen at low temperature gradually transform to classical B 2 dependent upon increasing the temperatures. In contrast, the annealed sample shows a WAL at small field superimposed on a parabolic feature for B > ± 4 T at low temperatures (T < 20 K). It shows a linear MR at intermediate temperatures (40 K < T < 100 K) and a parabolic MR at temperatures T > 100 K. Hall measurements on both samples exhibit a nonlinear behavior at 4.2 K pointing to the existence of two types of carriers with different mobility. The annealed sample also shows a drastic decrease in mobility by one order of magnitude and a reduction in Ioffe-Regel parameter (k F l) by a factor of ∼3. Disorder-induced localization of bulk carriers and its coexistence with localization-immune surface carriers at low T leads to WAL and WL. MR observed in the annealed sample can be attributed to the presence of both quantum-classical contribution and has been analysed using the Hikami-Larkin-Nagaoka (HLN) equation.

Original languageEnglish
Article number175602
JournalJournal of Physics Condensed Matter
Volume29
Issue number17
DOIs
StatePublished - 4 May 2017
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2017 IOP Publishing Ltd.

Funding

The authors acknowledge UGC-DAE CSR node at Kokilamedu for providing access to the 15 T cryogen free magnetoresistance facilities. We acknowledge Dr A K Sinha for XRD beam time at BL-12 of the Indus-2 synchrotron in Indore, India. We also acknowledge Dr A Thamizhavel and Dr N Subramanian for Laue measurements at TIFR, Mumbai.

FundersFunder number
Tata Institute of Fundamental Research
UGC-DAE Consortium for Scientific Research, University Grants Commission

    Keywords

    • electronic disorder
    • linear magnetoresistance
    • mobility
    • topological insulators
    • weak antilocalization
    • weak localization

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