Abstract
Graphene Nanoribbons (GNRs) are an emerging candidate to challenge the place of current semiconductor-based technology. In this work, we extend a model for Armchair Graphene Nanoribbons Field-Effect Transistor (AGNRFET) to the high-k dielectrics realm and examine the influences of quantum capacitance on its transient phenomena. The model is coded with Verilog-A and evaluated through SPICE simulations. We have considered a comparison between the extended model with and without the influence of the quantum capacitance. Simulation results show a realistic scenario where influence of the quantum capacitance significantly impacts the transient behaviour in circuit design. This proves the proposed model to be a valuable aid for the circuit design of future graphene-based applications.
Original language | English |
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Article number | 108060 |
Journal | Solid-State Electronics |
Volume | 184 |
DOIs | |
State | Published - Oct 2021 |
Bibliographical note
Publisher Copyright:© 2021 Elsevier Ltd
Keywords
- 2D materials
- Armchair graphene nanoribbon field effect transistor (AGNRFET)
- Graphene
- High-k dielectric
- Low Power
- Quantum capacitance
- Tunnel FETs