Quantum capacitance transient phenomena in high-k dielectric armchair graphene nanoribbon field-effect transistor model

Asaf Avnon, Roman Golman, Esteban Garzón, Ha Duong Ngo, Macro Lanuzza, Adam Teman

Research output: Contribution to journalArticlepeer-review

Abstract

Graphene Nanoribbons (GNRs) are an emerging candidate to challenge the place of current semiconductor-based technology. In this work, we extend a model for Armchair Graphene Nanoribbons Field-Effect Transistor (AGNRFET) to the high-k dielectrics realm and examine the influences of quantum capacitance on its transient phenomena. The model is coded with Verilog-A and evaluated through SPICE simulations. We have considered a comparison between the extended model with and without the influence of the quantum capacitance. Simulation results show a realistic scenario where influence of the quantum capacitance significantly impacts the transient behaviour in circuit design. This proves the proposed model to be a valuable aid for the circuit design of future graphene-based applications.

Original languageEnglish
Article number108060
JournalSolid-State Electronics
Volume184
DOIs
StatePublished - Oct 2021

Bibliographical note

Publisher Copyright:
© 2021 Elsevier Ltd

Keywords

  • 2D materials
  • Armchair graphene nanoribbon field effect transistor (AGNRFET)
  • Graphene
  • High-k dielectric
  • Low Power
  • Quantum capacitance
  • Tunnel FETs

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