Quantitative analysis on the effects of AlAs X states on Γ resonance in a GaAsAlAs double barrier structure under elevated hydrostatic pressures

Yongmin Kim; Kyooho Jung; Hyunsik Im; P. C. Klipstein; R. Grey; G. Hill

doi:10.1063/1.2012536

Quantitative analysis on the effects of AlAs X states on Γ resonance in a GaAsAlAs double barrier structure under elevated hydrostatic pressures

Yongmin Kim
, Kyooho Jung
, Hyunsik Im
, P. C. Klipstein
, R. Grey
, G. Hill

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We have investigated Γ -symmetry resonant tunneling in a GaAsAlAs "double barrier structure" with 20 Å thick AlAs barriers as a function of hydrostatic pressure. A quantitative analysis based on transfer matrix and self-consistent Schrödinger-Poisson calculations is performed to understand the effects of charge accumulation in each layer on the resonance bias and the resonance peak/valley currents, yielding the value of the longitudinal mass (mz*) at the band edge of 20 Å thick AlAs, mz* = (0.35±0.05) m0.

Original language	English
Article number	072106
Journal	Applied Physics Letters
Volume	87
Issue number	7
DOIs	https://doi.org/10.1063/1.2012536
State	Published - 15 Aug 2005
Externally published	Yes

Bibliographical note

Funding Information:
This work was funded by Grant No. (R01-2003-000-11628-0) from the Basic Research Program of the KOSEF, and by the Engineering and Physical Sciences Research Council (EPSRC) of the United Kingdom.

Funding

This work was funded by Grant No. (R01-2003-000-11628-0) from the Basic Research Program of the KOSEF, and by the Engineering and Physical Sciences Research Council (EPSRC) of the United Kingdom.

Funders
Engineering and Physical Sciences Research Council
Korea Science and Engineering Foundation

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@article{a479589f62ae498f84b991fa16d67d1c,

title = "Quantitative analysis on the effects of AlAs X states on Γ resonance in a GaAsAlAs double barrier structure under elevated hydrostatic pressures",

abstract = "We have investigated Γ -symmetry resonant tunneling in a GaAsAlAs {"}double barrier structure{"} with 20 {\AA} thick AlAs barriers as a function of hydrostatic pressure. A quantitative analysis based on transfer matrix and self-consistent Schr{\"o}dinger-Poisson calculations is performed to understand the effects of charge accumulation in each layer on the resonance bias and the resonance peak/valley currents, yielding the value of the longitudinal mass (mz*) at the band edge of 20 {\AA} thick AlAs, mz* = (0.35±0.05) m0.",

author = "Yongmin Kim and Kyooho Jung and Hyunsik Im and Klipstein, \{P. C.\} and R. Grey and G. Hill",

note = "Funding Information: This work was funded by Grant No. (R01-2003-000-11628-0) from the Basic Research Program of the KOSEF, and by the Engineering and Physical Sciences Research Council (EPSRC) of the United Kingdom.",

year = "2005",

month = aug,

day = "15",

doi = "10.1063/1.2012536",

language = "אנגלית",

volume = "87",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Quantitative analysis on the effects of AlAs X states on Γ resonance in a GaAsAlAs double barrier structure under elevated hydrostatic pressures

AU - Kim, Yongmin

AU - Jung, Kyooho

AU - Im, Hyunsik

AU - Klipstein, P. C.

AU - Grey, R.

AU - Hill, G.

N1 - Funding Information: This work was funded by Grant No. (R01-2003-000-11628-0) from the Basic Research Program of the KOSEF, and by the Engineering and Physical Sciences Research Council (EPSRC) of the United Kingdom.

PY - 2005/8/15

Y1 - 2005/8/15

N2 - We have investigated Γ -symmetry resonant tunneling in a GaAsAlAs "double barrier structure" with 20 Å thick AlAs barriers as a function of hydrostatic pressure. A quantitative analysis based on transfer matrix and self-consistent Schrödinger-Poisson calculations is performed to understand the effects of charge accumulation in each layer on the resonance bias and the resonance peak/valley currents, yielding the value of the longitudinal mass (mz*) at the band edge of 20 Å thick AlAs, mz* = (0.35±0.05) m0.

AB - We have investigated Γ -symmetry resonant tunneling in a GaAsAlAs "double barrier structure" with 20 Å thick AlAs barriers as a function of hydrostatic pressure. A quantitative analysis based on transfer matrix and self-consistent Schrödinger-Poisson calculations is performed to understand the effects of charge accumulation in each layer on the resonance bias and the resonance peak/valley currents, yielding the value of the longitudinal mass (mz*) at the band edge of 20 Å thick AlAs, mz* = (0.35±0.05) m0.

UR - https://www.scopus.com/pages/publications/24144439323

U2 - 10.1063/1.2012536

DO - 10.1063/1.2012536

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:24144439323

SN - 0003-6951

VL - 87

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 072106

ER -

Quantitative analysis on the effects of AlAs X states on Γ resonance in a GaAsAlAs double barrier structure under elevated hydrostatic pressures

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