Quantitative analysis of delocalization in the vicinity of the metal-insulator transition in doped semiconductors

I. Shlimak; M. Kaveh; R. Ussyshkin; V. Ginodman; L. Resnick; V. F. Gantmakher

doi:10.1088/0953-8984/9/45/015

Quantitative analysis of delocalization in the vicinity of the metal-insulator transition in doped semiconductors

I. Shlimak, M. Kaveh, R. Ussyshkin, V. Ginodman, L. Resnick, V. F. Gantmakher

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Abstract

A temperature-induced crossover from hopping to metallic conductivity is observed for barely insulating samples of Ge:As and Ge:Sb with impurity concentration N just below the critical value N_c0. The values of the correlation length ξ are obtained on both sides of the transition. A method is developed for determination of a 'delocalization temperature' T_d, which separates the hopping and metallic conductivity. It is shown that the dependence of T_d on N for various semiconductors can be reduced to a universal curve using normalization of the T-scale by the mean energy of the Coulomb interaction W = (e²/κ₀)N^1/3_c0.

Original language	English
Pages (from-to)	9873-9880
Number of pages	8
Journal	Journal of Physics Condensed Matter
Volume	9
Issue number	45
DOIs	https://doi.org/10.1088/0953-8984/9/45/015
State	Published - 10 Nov 1997

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abstract = "A temperature-induced crossover from hopping to metallic conductivity is observed for barely insulating samples of Ge:As and Ge:Sb with impurity concentration N just below the critical value Nc0. The values of the correlation length ξ are obtained on both sides of the transition. A method is developed for determination of a 'delocalization temperature' Td, which separates the hopping and metallic conductivity. It is shown that the dependence of Td on N for various semiconductors can be reduced to a universal curve using normalization of the T-scale by the mean energy of the Coulomb interaction W = (e2/κ0)N1/3c0.",

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AU - Shlimak, I.

AU - Kaveh, M.

AU - Ussyshkin, R.

AU - Ginodman, V.

AU - Resnick, L.

AU - Gantmakher, V. F.

PY - 1997/11/10

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N2 - A temperature-induced crossover from hopping to metallic conductivity is observed for barely insulating samples of Ge:As and Ge:Sb with impurity concentration N just below the critical value Nc0. The values of the correlation length ξ are obtained on both sides of the transition. A method is developed for determination of a 'delocalization temperature' Td, which separates the hopping and metallic conductivity. It is shown that the dependence of Td on N for various semiconductors can be reduced to a universal curve using normalization of the T-scale by the mean energy of the Coulomb interaction W = (e2/κ0)N1/3c0.

AB - A temperature-induced crossover from hopping to metallic conductivity is observed for barely insulating samples of Ge:As and Ge:Sb with impurity concentration N just below the critical value Nc0. The values of the correlation length ξ are obtained on both sides of the transition. A method is developed for determination of a 'delocalization temperature' Td, which separates the hopping and metallic conductivity. It is shown that the dependence of Td on N for various semiconductors can be reduced to a universal curve using normalization of the T-scale by the mean energy of the Coulomb interaction W = (e2/κ0)N1/3c0.

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Quantitative analysis of delocalization in the vicinity of the metal-insulator transition in doped semiconductors

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