Abstract
Oversize particles in CMP slurries are one of the main causes of surface defectivity (e.g. scratches, voids, and particle residuals) on low k dielectrics and metals. We have investigated the effect of pump induced particle agglomeration during the slurry handling process. The circulated copper and STI slurries (ceria particles) were used to polish copper/low k materials to investigate the shear effects induced by positive displacement pump. These studies were carried out by measuring the oversize particle distribution and the surface defectivity generated during the CMP polishing process. The magnitude of surface defectivity depends on normalized oversize particle distribution, which is as function of slurry composition (colloidal particles and chemicals) and external shear flow. These results can be applied to improve the stability of slurries in the slurry delivery for reducing particle-induced defectivity in metal and dielectrics CMP.
| Original language | English |
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| Pages | 509-514 |
| Number of pages | 6 |
| State | Published - 2007 |
| Externally published | Yes |
| Event | 24th International VLSI Multilevel Interconnection Conference, VMIC 2007 - Fremont, CA, United States Duration: 25 Sep 2007 → 27 Sep 2007 |
Conference
| Conference | 24th International VLSI Multilevel Interconnection Conference, VMIC 2007 |
|---|---|
| Country/Territory | United States |
| City | Fremont, CA |
| Period | 25/09/07 → 27/09/07 |