Pulsed laser deposition of SiC thin films at medium substrate temperatures

Y. S. Katharria, Sandeep Kumar, R. J. Choudhary, Ram Prakash, F. Singh, N. P. Lalla, D. M. Phase, D. Kanjilal

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

Systematic studies of thin silicon carbide (SiC) films deposited on Si (100) substrates using pulsed laser deposition technique at room temperature, 370 °C and 480 °C are carried out. X-ray photoelectron spectroscopy showed the formation of SiC bonds in the films at these temperatures along with some graphitic carbon clusters. Fourier transform infrared analysis also confirmed the formation of SiC nanocrystallites in the films. Transmission electron microscopy and electron diffraction were used to study the structural properties of nanocrystallites formed in the films. Surface morphological analysis using atomic force microscopy revealed the growth of smooth films.

Original languageEnglish
Pages (from-to)6083-6087
Number of pages5
JournalThin Solid Films
Volume516
Issue number18
DOIs
StatePublished - 31 Jul 2008
Externally publishedYes

Keywords

  • AFM
  • Raman spectroscopy
  • Silicon carbide
  • X-ray photo-electron spectroscopy

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