Abstract
YBa2Cu3O7/BaxSr1-xTiO3 bilayers were grown epitaxially on LaA103 substrates using the pulsed laser deposition method. A microstructural investigation revealed that all compositions of BaxSr1-xTiO3 investigated from x = 0 to x = 1 showed (001) orientation and epitaxy across the interface as analyzed by Rutherford backscattering spectroscopy channel yields of < 8% for BaTiO3 on YBa2Cu3O7 films. Dielectric properties including the dielectric constant, k, and the loss tangent, tan δ, were measured as a function of composition, and it was found that the highest k-values (k = 400) existed for the x = 0.72 composition.
Original language | English |
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Pages (from-to) | 875-878 |
Number of pages | 4 |
Journal | Journal of Electronic Materials |
Volume | 23 |
Issue number | 9 |
DOIs | |
State | Published - Sep 1994 |
Externally published | Yes |
Keywords
- Dielectrics
- ferroelectrics
- laser ablation
- oxide films