Pulsed laser deposition of epitaxial BaxSr1-xTiO3/YBa2Cu3O7 bilayers on LaAIO3 substrates

S. D. Harkness, C. F. Yue, M. A. Borek, R. K. Singh

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

YBa2Cu3O7/BaxSr1-xTiO3 bilayers were grown epitaxially on LaA103 substrates using the pulsed laser deposition method. A microstructural investigation revealed that all compositions of BaxSr1-xTiO3 investigated from x = 0 to x = 1 showed (001) orientation and epitaxy across the interface as analyzed by Rutherford backscattering spectroscopy channel yields of < 8% for BaTiO3 on YBa2Cu3O7 films. Dielectric properties including the dielectric constant, k, and the loss tangent, tan δ, were measured as a function of composition, and it was found that the highest k-values (k = 400) existed for the x = 0.72 composition.

Original languageEnglish
Pages (from-to)875-878
Number of pages4
JournalJournal of Electronic Materials
Volume23
Issue number9
DOIs
StatePublished - Sep 1994
Externally publishedYes

Keywords

  • Dielectrics
  • ferroelectrics
  • laser ablation
  • oxide films

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