Pulsed laser deposition of cubic boron nitride films on silicon substrates

F. Qian, V. Nagabushnam, R. K. Singh

Research output: Contribution to journalArticlepeer-review

28 Scopus citations


Quasicrystalline cubic boron nitride (cBN) thin films have been deposited on clean single crystal silicon substrates by the pulsed laser deposition technique. Different chamber gases (N2 and NH3) at pressures between 10-3 and 800 mTorr were employed for the deposition processes. Typically, boron-rich films were obtained, but the boron/nitrogen ratio was reduced when nitrogen or nitrogen/ammonia gases were incorporated during the deposition process. Under a wide range of deposition conditions, the films exhibited a quasicrystalline cubic phase near the film-substrate interface (∼150 Å thick). A completely amorphous phase was observed beyond this region, suggesting that the substrate plays an important role in the crystallization of cBN thin films.

Original languageEnglish
Pages (from-to)317-319
Number of pages3
JournalApplied Physics Letters
Issue number3
StatePublished - 1993
Externally publishedYes


Dive into the research topics of 'Pulsed laser deposition of cubic boron nitride films on silicon substrates'. Together they form a unique fingerprint.

Cite this