Proximity induced band gap opening in topological-magnetic heterostructure (Ni80Fe20/p-TlBiSe2/p-Si) under ambient condition

Roshani Singh, Gyanendra Kumar Maurya, Vidushi Gautam, Rachana Kumar, Mahesh Kumar, K. G. Suresh, Brahmaranjan Panigrahi, Chandrasekhar Murapaka, Arbinda Haldar, Pramod Kumar

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1 Scopus citations

Abstract

The broken time reversal symmetry states may result in the opening of a band gap in TlBiSe2 leading to several interesting phenomena which are potentially relevant for spintronic applications. In this work, the quantum interference and magnetic proximity effects have been studied in Ni80Fe20/p-TlBiSe2/p-Si (Magnetic/TI) heterostructure using physical vapor deposition technique. Raman analysis shows the symmetry breaking with the appearance of A21u mode. The electrical characteristics are investigated under dark and illumination conditions in the absence as well as in the presence of a magnetic field. The outcomes of the examined device reveal excellent photo response in both forward and reverse bias regions. Interestingly, under a magnetic field, the device shows a reduction in electrical conductivity at ambient conditions due to the crossover of weak localization and separation of weak antilocalization, which are experimentally confirmed by magnetoresistance measurement. Further, the photo response has also been assessed by the transient absorption spectroscopy through analysis of charge transfer and carrier relaxation mechanisms. Our results can be beneficial for quantum computation and further study of topological insulator/ferromagnet heterostructure and topological material based spintronic devices due to high spin orbit coupling along with dissipationless conduction channels at the surface states.

Original languageEnglish
Article number22290
JournalScientific Reports
Volume13
Issue number1
DOIs
StatePublished - 15 Dec 2023
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2023, The Author(s).

Funding

The Dr. Pramod Kumar would like to thank Science and Engineering Research Board (CRG/2022/000070), Govt. of India and CSTUP (CST/D-1037) for providing the financial support to carry out this work. This work was also funded by DST Inspire Scheme (DST/INSPIRE/03/2022/004455), Department of Science and Technology. The Dr. Pramod Kumar would like to thank Science and Engineering Research Board (CRG/2022/000070), Govt. of India and CSTUP (CST/D-1037) for providing the financial support to carry out this work. This work was also funded by DST Inspire Scheme (DST/INSPIRE/03/2022/004455), Department of Science and Technology.

FundersFunder number
CSTUPDST/INSPIRE/03/2022/004455, CST/D-1037
Department of Science and Technology, Ministry of Science and Technology, India
Science and Engineering Research BoardCRG/2022/000070

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