Abstract
A complex study has been made of the electrophysical properties of silicon doped by neutron transmutation in RBMK-1000 reactors. It is shown that the neutron-transmutation-doped silicon obtained in an RBMK-1000 reactor and devices based on it have improved parameters and increased breakdown voltages. The process of doping in RBMK-1000 reactors makes it possible to obtain a high number of large ingots without detriment to energy production.
| Original language | English |
|---|---|
| Pages (from-to) | 57-62 |
| Number of pages | 6 |
| Journal | Soviet electrical engineering |
| Volume | 55 |
| Issue number | 3 |
| State | Published - 1984 |