PROPERTIES OF SILICON DOPED IN THE RBMK-! 000 REACTOR OF CHERNOBYL'SK ATOMIC ELECTRIC POWER PLANT.

V. M. Volle; V. B. Voronkov; I. V. Grekhov; A. N. Erykalov; M. L. Kozhukh; V. A. Kozlov; Yu V. Petrov; N. A. Sobolev; V. M. Tuchkevich; V. E. Chelnokov; I. S. Shlimak

PROPERTIES OF SILICON DOPED IN THE RBMK-! 000 REACTOR OF CHERNOBYL'SK ATOMIC ELECTRIC POWER PLANT.

V. M. Volle, V. B. Voronkov, I. V. Grekhov, A. N. Erykalov, M. L. Kozhukh, V. A. Kozlov, Yu V. Petrov, N. A. Sobolev, V. M. Tuchkevich, V. E. Chelnokov, I. S. Shlimak

Department of Physics - at Bar-Ilan University

Research output: Contribution to journal › Article › peer-review

Abstract

A complex study has been made of the electrophysical properties of silicon doped by neutron transmutation in RBMK-1000 reactors. It is shown that the neutron-transmutation-doped silicon obtained in an RBMK-1000 reactor and devices based on it have improved parameters and increased breakdown voltages. The process of doping in RBMK-1000 reactors makes it possible to obtain a high number of large ingots without detriment to energy production.

Original language	English
Pages (from-to)	57-62
Number of pages	6
Journal	Soviet electrical engineering
Volume	55
Issue number	3
State	Published - 1984

Cite this

@article{b442b6879e2342faab4b276a45170283,

title = "PROPERTIES OF SILICON DOPED IN THE RBMK-! 000 REACTOR OF CHERNOBYL'SK ATOMIC ELECTRIC POWER PLANT.",

abstract = "A complex study has been made of the electrophysical properties of silicon doped by neutron transmutation in RBMK-1000 reactors. It is shown that the neutron-transmutation-doped silicon obtained in an RBMK-1000 reactor and devices based on it have improved parameters and increased breakdown voltages. The process of doping in RBMK-1000 reactors makes it possible to obtain a high number of large ingots without detriment to energy production.",

author = "Volle, {V. M.} and Voronkov, {V. B.} and Grekhov, {I. V.} and Erykalov, {A. N.} and Kozhukh, {M. L.} and Kozlov, {V. A.} and Petrov, {Yu V.} and Sobolev, {N. A.} and Tuchkevich, {V. M.} and Chelnokov, {V. E.} and Shlimak, {I. S.}",

year = "1984",

language = "אנגלית",

volume = "55",

pages = "57--62",

journal = "Soviet electrical engineering",

issn = "0038-5379",

publisher = "Pleiades Publishing",

number = "3",

}

TY - JOUR

T1 - PROPERTIES OF SILICON DOPED IN THE RBMK-! 000 REACTOR OF CHERNOBYL'SK ATOMIC ELECTRIC POWER PLANT.

AU - Volle, V. M.

AU - Voronkov, V. B.

AU - Grekhov, I. V.

AU - Erykalov, A. N.

AU - Kozhukh, M. L.

AU - Kozlov, V. A.

AU - Petrov, Yu V.

AU - Sobolev, N. A.

AU - Tuchkevich, V. M.

AU - Chelnokov, V. E.

AU - Shlimak, I. S.

PY - 1984

Y1 - 1984

N2 - A complex study has been made of the electrophysical properties of silicon doped by neutron transmutation in RBMK-1000 reactors. It is shown that the neutron-transmutation-doped silicon obtained in an RBMK-1000 reactor and devices based on it have improved parameters and increased breakdown voltages. The process of doping in RBMK-1000 reactors makes it possible to obtain a high number of large ingots without detriment to energy production.

AB - A complex study has been made of the electrophysical properties of silicon doped by neutron transmutation in RBMK-1000 reactors. It is shown that the neutron-transmutation-doped silicon obtained in an RBMK-1000 reactor and devices based on it have improved parameters and increased breakdown voltages. The process of doping in RBMK-1000 reactors makes it possible to obtain a high number of large ingots without detriment to energy production.

UR - http://www.scopus.com/inward/record.url?scp=0021663123&partnerID=8YFLogxK

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0021663123

SN - 0038-5379

VL - 55

SP - 57

EP - 62

JO - Soviet electrical engineering

JF - Soviet electrical engineering

IS - 3

ER -

PROPERTIES OF SILICON DOPED IN THE RBMK-! 000 REACTOR OF CHERNOBYL'SK ATOMIC ELECTRIC POWER PLANT.

Abstract

Other files and links

Fingerprint

Cite this