Progress with antimonide based detectors at SCD

Olga Klin, Steve Grossman, Noam Snapi, Maya Brumer, Inna Lukomsky, Michael Yassen, Boris Yofis, Alex Glozman, Ami Zemel, Tal Fishman, Eyal Berkowicz, Osnat Magen, Joelle Oiknine-Schlesinger, Itay Shtrichman, Eliezer Weiss, P. C. Klipstein

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

20 Scopus citations


Detectors composed of novel Antimonide Based Compound Semiconductor (ABCS) materials offer some unique advantages. InAs/GaSb type II superlattices (T2SL) offer low dark currents and allow full bandgap tunability from the MWIR to the VLWIR. InAs1-xSbx alloys (x∼0.1) also offer low dark currents and can be used to make MWIR devices with a cut-off wavelength close to 4.2μm. Both can be grown on commercially available GaSb substrates and both can be combined with lattice matched GaAlSbAs barrier layers to make a new type of High Operating Temperature (HOT) detector, known as an XBn detector. In an XBn detector the Generation-Recombination (G-R) contribution to the dark current can be suppressed, giving a lower net dark current, or allowing the same dark current to be reached at a higher temperature than in a conventional photodiode. The ABCS program at SCD began several years ago with the development of an epi-InSb detector whose dark current is about 15 times lower than in standard implanted devices. This detector is now entering production. More recently we have begun developing infrared detectors based both on T2SL and InAsSb alloy materials. Our conventional photodiodes made from T2SL materials with a cut-off wavelength in the region of 4.6μm exhibit dark currents consistent with a BLIP temperature of ∼ 120-130K at f/3. Characterization results of the T2SL materials and diodes are presented. We have also initiated a program to validate the XBn concept and to develop high operating temperature InAsSb XBn detectors. The crystallographic, electrical and optical properties of the XBn materials and devices are discussed. We demonstrate a BLIP temperature of ∼ 150K at f/3.

Original languageEnglish
Title of host publicationInfrared Technology and Applications XXXV
StatePublished - 2009
Externally publishedYes
EventInfrared Technology and Applications XXXV - Orlando, FL, United States
Duration: 13 Apr 200917 Apr 2009

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


ConferenceInfrared Technology and Applications XXXV
Country/TerritoryUnited States
CityOrlando, FL


  • Dark current
  • Diffusion current
  • Focal plane array
  • Generation-recombination current
  • High operating temperature
  • Indium arsenide antimonide
  • Infrared detector
  • Shockley-read-hall
  • Type II superlattic


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