Abstract
For many device applications, it is desirable to grow thin films of high temperature superconductors on conducting substrates. Metalorganic chemical vapor deposition (MOCVD) is considered as an ideal technique for the deposition of high temperature superconducting thin films and related materials. Rapid isothermal processing (RIP) based on incoherent radiation as the sources of light is emerging as a low thermal budget (integral of processing time and temperature) processing technique. We have used RIP assisted MOCVD for the deposition of high quality films of YBa2Cu307 (YBCO) on insulating substrates at temperature as low as 610°C. We report the results of processing and characterization of YBCO films deposited on bulk gold foils and An/ Si substrates by RIP assisted MOCVD. By using the YBCO/Au foils, we show improvement in the performance of Au/YBCO/n-Si Schottky diodes operating at 50 K.
Original language | English |
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Pages (from-to) | 1-7 |
Number of pages | 7 |
Journal | IEEE Transactions on Applied Superconductivity |
Volume | 3 |
Issue number | 1 |
DOIs | |
State | Published - Mar 1993 |
Externally published | Yes |
Funding
Manuscript received September 29, 1992; revised November 19, 1992. This paper was supported by Defense Advanced Research Projects Agents (DARPA) Contract No. MDA-972-88-D-004. R. Singh is with the Department of Electrical and Computer Engineering, Clemson University, Clemson, SC 29631. J. T. C. Ng was with the Department of Electrical and Computer Engineering, Clemson University, Clemson, SC 29631. He is now with North American Computers. R. K. Singh and F. Qian are with the Department of Materials Science Engineering, University of Florida, Gainesville, FL 32611. N. J. Hsu and D. J. Krueger are with the School of Electrical Engineering and Computer Science University of Oaklahoma, Norman, OK 73019. IEEE Log Number 9206630.
Funders | Funder number |
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Defense Advanced Research Projects Agency | MDA-972-88-D-004 |