Abstract
A study is made of the effect of internal electric fields on the probability of direct transitions in the radiative recombination of an electron localized at an As donor impurity in Ge. Investigation of the impurity-impurity luminescence indicates that the probability of direct transitions decreases when the distance between impurities is reduced. A new model is proposed in which the effect of the electric field produced by a recombining hole lowers, in the linear appxomation (the Stark effect), the probability vertical psi (O) vertical **2 of finding an electron at a donor site and, therefore, also the probability of a direct transition. It is also shown that a weak line corresponding to direct transitions which is observed in the band-impurity lumininescence can be explained by a strong distortion of the electron wave function at a donor site caused by a recombining free hole.
| Original language | English |
|---|---|
| Pages (from-to) | 1166-1169 |
| Number of pages | 4 |
| Journal | Semiconductors |
| Volume | 6 |
| Issue number | 7 |
| State | Published - 1973 |
| Externally published | Yes |