Pressure-tuned resonance Raman scattering in InAs/GaSb superlattices

S. G. Lyapin; A. V. Lomsadze; I. A. Trojan; P. C. Klipstein; N. J. Mason; P. J. Walker

doi:10.1002/pssb.2221980142

Pressure-tuned resonance Raman scattering in InAs/GaSb superlattices

S. G. Lyapin, A. V. Lomsadze, I. A. Trojan, P. C. Klipstein, N. J. Mason, P. J. Walker

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We have performed a pressure-tuned resonance Raman scattering study in short-period GaSb/InAs SLs in the region of E₁ and E₁ + Δ₁ in GaSb. Resonance profiles for polarized Raman scattering by both LO and elastic interface modes reveal two electronic transitions with two different types of Fröhlich-interaction-induced scattering. The LO resonance at the E₁ gap displays strong interference and we attribute it to intrinsic intrasubband Fröhlich scattering, which is dipole allowed due to the difference in the degree of localization of the electron and hole wave functions. A new resonance enhancement peak, not present in the bulk, has been observed in between the E₁ and E₁ + Δ₁I gaps of GaSb. This resonance appears to be dominated by extrinsic Fröhlich scattering.

Original language	English
Pages (from-to)	321-327
Number of pages	7
Journal	Physica Status Solidi (B): Basic Research
Volume	198
Issue number	1
DOIs	https://doi.org/10.1002/pssb.2221980142
State	Published - Nov 1996
Externally published	Yes

Access to Document

10.1002/pssb.2221980142

Cite this

@article{0e41a7e8c4954dd987d3825d53085616,

title = "Pressure-tuned resonance Raman scattering in InAs/GaSb superlattices",

abstract = "We have performed a pressure-tuned resonance Raman scattering study in short-period GaSb/InAs SLs in the region of E1 and E1 + Δ1 in GaSb. Resonance profiles for polarized Raman scattering by both LO and elastic interface modes reveal two electronic transitions with two different types of Fr{\"o}hlich-interaction-induced scattering. The LO resonance at the E1 gap displays strong interference and we attribute it to intrinsic intrasubband Fr{\"o}hlich scattering, which is dipole allowed due to the difference in the degree of localization of the electron and hole wave functions. A new resonance enhancement peak, not present in the bulk, has been observed in between the E1 and E1 + Δ1I gaps of GaSb. This resonance appears to be dominated by extrinsic Fr{\"o}hlich scattering.",

author = "Lyapin, {S. G.} and Lomsadze, {A. V.} and Trojan, {I. A.} and Klipstein, {P. C.} and Mason, {N. J.} and Walker, {P. J.}",

year = "1996",

month = nov,

doi = "10.1002/pssb.2221980142",

language = "אנגלית",

volume = "198",

pages = "321--327",

journal = "Physica Status Solidi (B): Basic Research",

issn = "0370-1972",

publisher = "John Wiley and Sons Inc.",

number = "1",

}

TY - JOUR

T1 - Pressure-tuned resonance Raman scattering in InAs/GaSb superlattices

AU - Lyapin, S. G.

AU - Lomsadze, A. V.

AU - Trojan, I. A.

AU - Klipstein, P. C.

AU - Mason, N. J.

AU - Walker, P. J.

PY - 1996/11

Y1 - 1996/11

N2 - We have performed a pressure-tuned resonance Raman scattering study in short-period GaSb/InAs SLs in the region of E1 and E1 + Δ1 in GaSb. Resonance profiles for polarized Raman scattering by both LO and elastic interface modes reveal two electronic transitions with two different types of Fröhlich-interaction-induced scattering. The LO resonance at the E1 gap displays strong interference and we attribute it to intrinsic intrasubband Fröhlich scattering, which is dipole allowed due to the difference in the degree of localization of the electron and hole wave functions. A new resonance enhancement peak, not present in the bulk, has been observed in between the E1 and E1 + Δ1I gaps of GaSb. This resonance appears to be dominated by extrinsic Fröhlich scattering.

AB - We have performed a pressure-tuned resonance Raman scattering study in short-period GaSb/InAs SLs in the region of E1 and E1 + Δ1 in GaSb. Resonance profiles for polarized Raman scattering by both LO and elastic interface modes reveal two electronic transitions with two different types of Fröhlich-interaction-induced scattering. The LO resonance at the E1 gap displays strong interference and we attribute it to intrinsic intrasubband Fröhlich scattering, which is dipole allowed due to the difference in the degree of localization of the electron and hole wave functions. A new resonance enhancement peak, not present in the bulk, has been observed in between the E1 and E1 + Δ1I gaps of GaSb. This resonance appears to be dominated by extrinsic Fröhlich scattering.

UR - http://www.scopus.com/inward/record.url?scp=0030518837&partnerID=8YFLogxK

U2 - 10.1002/pssb.2221980142

DO - 10.1002/pssb.2221980142

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0030518837

SN - 0370-1972

VL - 198

SP - 321

EP - 327

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

IS - 1

ER -

Pressure-tuned resonance Raman scattering in InAs/GaSb superlattices

Abstract

Access to Document

Other files and links

Fingerprint

Cite this