Pressure-tuned resonance Raman scattering in InAs/GaSb superlattices

S. G. Lyapin, A. V. Lomsadze, I. A. Trojan, P. C. Klipstein, N. J. Mason, P. J. Walker

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


We have performed a pressure-tuned resonance Raman scattering study in short-period GaSb/InAs SLs in the region of E1 and E1 + Δ1 in GaSb. Resonance profiles for polarized Raman scattering by both LO and elastic interface modes reveal two electronic transitions with two different types of Fröhlich-interaction-induced scattering. The LO resonance at the E1 gap displays strong interference and we attribute it to intrinsic intrasubband Fröhlich scattering, which is dipole allowed due to the difference in the degree of localization of the electron and hole wave functions. A new resonance enhancement peak, not present in the bulk, has been observed in between the E1 and E1 + Δ1I gaps of GaSb. This resonance appears to be dominated by extrinsic Fröhlich scattering.

Original languageEnglish
Pages (from-to)321-327
Number of pages7
JournalPhysica Status Solidi (B): Basic Research
Issue number1
StatePublished - Nov 1996
Externally publishedYes


Dive into the research topics of 'Pressure-tuned resonance Raman scattering in InAs/GaSb superlattices'. Together they form a unique fingerprint.

Cite this