Pressure-induced Γ-X crossover in self-assembled In(Ga)As/GaAs quantum dots

S. G. Lyapin; I. E. Itskevich; I. A. Trojan; P. C. Klipstein; A. Polimeni; L. Eaves; P. C. Main; M. Henini

doi:10.1002/(SICI)1521-3951(199901)211:1<79::AID-PSSB79>3.0.CO;2-F

Pressure-induced Γ-X crossover in self-assembled In(Ga)As/GaAs quantum dots

S. G. Lyapin
, I. E. Itskevich
, I. A. Trojan
, P. C. Klipstein
, A. Polimeni
, L. Eaves
, P. C. Main
, M. Henini

University of Oxford
Russian Academy of Sciences
University of Nottingham
RAS - Institute of Solid State Physics

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We report low-temperature photoluminescence (PL) studies of In(Ga)As/GaAs self-assembled quantum dots at hydrostatic pressures of up to 9 GPa. Observation of the Γ-X crossover between electron states confined in the dots and X-valley states in the GaAs matrix allows us to evaluate separately the energies of the electron and hole confined states.

Original language	English
Pages (from-to)	79-83
Number of pages	5
Journal	Physica Status Solidi (B): Basic Research
Volume	211
Issue number	1
DOIs	https://doi.org/10.1002/(SICI)1521-3951(199901)211:1<79::AID-PSSB79>3.0.CO;2-F
State	Published - Jan 1999
Externally published	Yes

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10.1002/(SICI)1521-3951(199901)211:1<79::AID-PSSB79>3.0.CO;2-F

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abstract = "We report low-temperature photoluminescence (PL) studies of In(Ga)As/GaAs self-assembled quantum dots at hydrostatic pressures of up to 9 GPa. Observation of the Γ-X crossover between electron states confined in the dots and X-valley states in the GaAs matrix allows us to evaluate separately the energies of the electron and hole confined states.",

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T1 - Pressure-induced Γ-X crossover in self-assembled In(Ga)As/GaAs quantum dots

AU - Lyapin, S. G.

AU - Itskevich, I. E.

AU - Trojan, I. A.

AU - Klipstein, P. C.

AU - Polimeni, A.

AU - Eaves, L.

AU - Main, P. C.

AU - Henini, M.

PY - 1999/1

Y1 - 1999/1

N2 - We report low-temperature photoluminescence (PL) studies of In(Ga)As/GaAs self-assembled quantum dots at hydrostatic pressures of up to 9 GPa. Observation of the Γ-X crossover between electron states confined in the dots and X-valley states in the GaAs matrix allows us to evaluate separately the energies of the electron and hole confined states.

AB - We report low-temperature photoluminescence (PL) studies of In(Ga)As/GaAs self-assembled quantum dots at hydrostatic pressures of up to 9 GPa. Observation of the Γ-X crossover between electron states confined in the dots and X-valley states in the GaAs matrix allows us to evaluate separately the energies of the electron and hole confined states.

UR - https://www.scopus.com/pages/publications/0032623272

U2 - 10.1002/(SICI)1521-3951(199901)211:1<79::AID-PSSB79>3.0.CO;2-F

DO - 10.1002/(SICI)1521-3951(199901)211:1<79::AID-PSSB79>3.0.CO;2-F

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JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

IS - 1

ER -

Pressure-induced Γ-X crossover in self-assembled In(Ga)As/GaAs quantum dots

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