Pressure-induced Γ-X crossover in self-assembled In(Ga)As/GaAs quantum dots

S. G. Lyapin, I. E. Itskevich, I. A. Trojan, P. C. Klipstein, A. Polimeni, L. Eaves, P. C. Main, M. Henini

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

We report low-temperature photoluminescence (PL) studies of In(Ga)As/GaAs self-assembled quantum dots at hydrostatic pressures of up to 9 GPa. Observation of the Γ-X crossover between electron states confined in the dots and X-valley states in the GaAs matrix allows us to evaluate separately the energies of the electron and hole confined states.

Original languageEnglish
Pages (from-to)79-83
Number of pages5
JournalPhysica Status Solidi (B): Basic Research
Volume211
Issue number1
DOIs
StatePublished - Jan 1999
Externally publishedYes

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