TY - JOUR
T1 - Preparation of Ge@Organosilicon core-shell structures and characterization by solid state NMR and other techniques
AU - Eshed, Michal
AU - Keinan-Adamsky, Keren
AU - Goobes, Gil
AU - Gedanken, Aharon
PY - 2013/5/30
Y1 - 2013/5/30
N2 - Many core-shell materials having a protecting outer layer have lately been proposed. In such materials it is not uncommon that chemical or thermal stability issues of the core material are resolved by a proper choice of the shell material. We report here the formation of core-shell structures by pyrolysis of a mixture of tetraethyl germanium and tetramethyl silicon at 750 C in a simple one-step reaction without the use of catalysts under "RAPET" conditions. The composite product, germanium-core/ organosilicon-shell (Ge@Organosilicon), is formed in two morphologies, rods and spheroids. The rods radial distribution is rather narrow while the spheroids exhibit a broader distribution due to their tendency to agglomerate. The germanium core phase is crystalline covered by a disordered organosilicon layer. The contribution of each of the precursors to the final product is shown by selected-area EDS and solid state NMR spectroscopy and further corroborated by RAMAN, EPR, and powder X-ray diffraction analysis.
AB - Many core-shell materials having a protecting outer layer have lately been proposed. In such materials it is not uncommon that chemical or thermal stability issues of the core material are resolved by a proper choice of the shell material. We report here the formation of core-shell structures by pyrolysis of a mixture of tetraethyl germanium and tetramethyl silicon at 750 C in a simple one-step reaction without the use of catalysts under "RAPET" conditions. The composite product, germanium-core/ organosilicon-shell (Ge@Organosilicon), is formed in two morphologies, rods and spheroids. The rods radial distribution is rather narrow while the spheroids exhibit a broader distribution due to their tendency to agglomerate. The germanium core phase is crystalline covered by a disordered organosilicon layer. The contribution of each of the precursors to the final product is shown by selected-area EDS and solid state NMR spectroscopy and further corroborated by RAMAN, EPR, and powder X-ray diffraction analysis.
UR - http://www.scopus.com/inward/record.url?scp=84878351585&partnerID=8YFLogxK
U2 - 10.1021/jp400296y
DO - 10.1021/jp400296y
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SN - 1932-7447
VL - 117
SP - 11086
EP - 11094
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
IS - 21
ER -