Abstract
Power analysis attacks are an effective tool to extract sensitive information using side-channel analysis,forming a serious threat to IoT systems-on-a-chip (SoCs). Embedded memories implemented with conventional 6T SRAM macrocells often dominate the area and power of these SoCs. In this paper,for the first time,we use silicon measurements to prove that conventional SRAM arrays leak valuable information and that their data can be extracted using power analysis attacks. In order to provide a power analysis resilient embedded memory and adhere to the area constraints of modern SoCs,we implement a low-cost impedance randomization unit,which is integrated into the periphery of a conventional 6T SRAM macro. Preliminary silicon measurements of a 55 nm test-chip implementing the proposed memory array demonstrate a significant information leakage reduction at a low-cost 1% area overhead and no speed and power penalties compared to a conventional SRAM design.
Original language | English |
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Title of host publication | ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 69-72 |
Number of pages | 4 |
ISBN (Electronic) | 9781728115504 |
DOIs | |
State | Published - Sep 2019 |
Event | 45th IEEE European Solid State Circuits Conference, ESSCIRC 2019 - Cracow, Poland Duration: 23 Sep 2019 → 26 Sep 2019 |
Publication series
Name | ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference |
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Conference
Conference | 45th IEEE European Solid State Circuits Conference, ESSCIRC 2019 |
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Country/Territory | Poland |
City | Cracow |
Period | 23/09/19 → 26/09/19 |
Bibliographical note
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