Post-growth, In doping of CdTe single crystals via vapor phase

Vera Lyahovitskaya; Larissa Kaplan; Jaydeb Goswami; David Cahen

doi:10.1016/s0022-0248(98)00908-7

Post-growth, In doping of CdTe single crystals via vapor phase

Vera Lyahovitskaya, Larissa Kaplan, Jaydeb Goswami, David Cahen

Weizmann Institute of Science

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We have developed a new, efficient method to dope bulk single crystals of CdTe by In, via gas phase diffusion, using In₄Te₃ as the source. Doping was carried out on crystals of very high resistivity (>5 MΩ cm), following annealing in the temperature range of 350-1000°C. Resulting crystals showed n-type conductivity with a free carrier concentration in the range of 10¹⁵-10¹⁸ cm^-3 and carrier mobility of 100-750 cm²/(V s), depending on the annealing temperature and time, and on the cooling conditions. Incorporation of In was found to be a function of annealing time and temperature only. Up to 650°C, the In and the free electron concentrations are roughly the same.

Original language	English
Pages (from-to)	106-112
Number of pages	7
Journal	Journal of Crystal Growth
Volume	197
Issue number	1-2
DOIs	https://doi.org/10.1016/s0022-0248(98)00908-7
State	Published - 1999
Externally published	Yes

Funding

This work was supported by the German–Israeli Foundation for Scientific Research and the Israel Science Foundation, Jerusalem, Israel. We thank Rami Cohen and Igor Lubomirski for help in measurements and fruitful discussions.

Funders	Funder number
German-Israeli Foundation for Scientific Research
Israel Science Foundation

Keywords

CdTe
Doping
In
InTe

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10.1016/s0022-0248(98)00908-7

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abstract = "We have developed a new, efficient method to dope bulk single crystals of CdTe by In, via gas phase diffusion, using In4Te3 as the source. Doping was carried out on crystals of very high resistivity (>5 MΩ cm), following annealing in the temperature range of 350-1000°C. Resulting crystals showed n-type conductivity with a free carrier concentration in the range of 1015-1018 cm-3 and carrier mobility of 100-750 cm2/(V s), depending on the annealing temperature and time, and on the cooling conditions. Incorporation of In was found to be a function of annealing time and temperature only. Up to 650°C, the In and the free electron concentrations are roughly the same.",

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AU - Lyahovitskaya, Vera

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AU - Goswami, Jaydeb

AU - Cahen, David

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AB - We have developed a new, efficient method to dope bulk single crystals of CdTe by In, via gas phase diffusion, using In4Te3 as the source. Doping was carried out on crystals of very high resistivity (>5 MΩ cm), following annealing in the temperature range of 350-1000°C. Resulting crystals showed n-type conductivity with a free carrier concentration in the range of 1015-1018 cm-3 and carrier mobility of 100-750 cm2/(V s), depending on the annealing temperature and time, and on the cooling conditions. Incorporation of In was found to be a function of annealing time and temperature only. Up to 650°C, the In and the free electron concentrations are roughly the same.

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Post-growth, In doping of CdTe single crystals via vapor phase

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