Research output: Patent
}
TY - PAT
T1 - Porous silicon carbide (SiC) semiconductor device
AU - Shor, J.
AU - Kurtz, A.D.
PY - 1994
Y1 - 1994
M3 - Patent
M1 - 5,298,767
PB - Washington, DC: U.S. Patent and Trademark Office
ER -