Porous silicon carbide (SiC) semiconductor device

Original language	American English
Patent number	5,298,767
State	Published - 1994

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Shor, J., & Kurtz, A. D. (1994). Porous silicon carbide (SiC) semiconductor device. (Patent No. 5,298,767). Washington, DC: U.S. Patent and Trademark Office.

Shor, J. (Inventor) ; Kurtz, A.D. (Inventor). / Porous silicon carbide (SiC) semiconductor device. Washington, DC: U.S. Patent and Trademark Office. Patent No.: 5,298,767.

@misc{d39c0930701045aab10622b11cae82dc,

title = "Porous silicon carbide (SiC) semiconductor device",

author = "J. Shor and A.D. Kurtz",

year = "1994",

language = "American English",

publisher = "Washington, DC: U.S. Patent and Trademark Office",

type = "Patent",

note = "5,298,767",

}

Shor, J & Kurtz, AD, Porous silicon carbide (SiC) semiconductor device, Patent No. 5,298,767.

Porous silicon carbide (SiC) semiconductor device. / Shor, J. (Inventor); Kurtz, A.D. (Inventor).
Washington, DC: U.S. Patent and Trademark Office. Patent No.: 5,298,767.

Research output: Patent

TY - PAT

T1 - Porous silicon carbide (SiC) semiconductor device

AU - Shor, J.

AU - Kurtz, A.D.

PY - 1994

Y1 - 1994

M3 - Patent

M1 - 5,298,767

PB - Washington, DC: U.S. Patent and Trademark Office

ER -

Shor J, Kurtz AD, inventors. Porous silicon carbide (SiC) semiconductor device. 5,298,767. 1994.