Polarization-independent intersubband based GaInAsN quantum-well photodetector with dominant detection at 1.42 μm

Asaf Albo, Alon Vardi, Dan Fekete, Gad Bahir

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Abstract

We report on a room temperature polarization-independent intersubband photocurrent (PC) in quantum-well infrared photodetector based on a GaInAsN/GaAs standard multiple-quantum-well structure. The dominant room temperature PC is peaked at 1.42 μm with peak responsivity of 2 A/W and exhibits similar intensities in TM and TE polarizations. The structure's energy levels were analyzed using a ten band k·p model. As a result of this analysis the 1.42 μm dominant PC transition is attributed to a transition from the fundamental E1- electron level into the localized quasicontinuum state formed by the unconfined E2+ electron energy level.

Original languageEnglish
Article number093503
JournalApplied Physics Letters
Volume94
Issue number9
DOIs
StatePublished - 2009
Externally publishedYes

Bibliographical note

Funding Information:
This work was supported partially by Technion-Russell-Berrie Nanotechnology Institute Grant No. 2009101.

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