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Plasmonics Yields Efficient Electron Transport via Assembly of Shell-Insulated Au Nanoparticles

  • Chuanping Li
  • , David Cahen
  • , Ping Wang
  • , Haijuan Li
  • , Jie Zhang
  • , Yongdong Jin
  • CAS - Changchun Institute of Applied Chemistry
  • University of Chinese Academy of Sciences
  • Weizmann Institute of Science

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

Junctions built from metallic nanoparticles (NPs) can circumvent the diffraction limit and combine molecular/nanoelectronics with plasmonics. However, experimental advances in plasmon-assisted electron transport at the nanoscale have been limited. We construct junctions of a robust, molecule-free, suspended film, built solely from AuNPs, capped by SiO2 shells (Au@SiO2), which give insulating tunneling gaps up to 3.6 nm between the NPs. Current measured across monolayers of such AuNPs shows ultra-long-range, plasmon-enabled electron transport (P-transport), beyond the range of normal electron tunneling across insulators. This finding challenges the present understanding of electron transport in such systems and opens possibilities for future combinations of plasmonics and nanoelectronics.

Original languageEnglish
Pages (from-to)213-221
Number of pages9
JournaliScience
Volume8
DOIs
StatePublished - 26 Oct 2018
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2018 The Author(s)

Funding

C.L. thanks Y. Tian (from Jilin University) for the FDTD simulation of the electric field distribution and Z.Q. Wang and X.H. Li (all from Northeast Normal University) for facilitating the temperature-dependent I-V measurement. Y.J. acknowledges support from the National Key Research and Development Program of China (Grant No. 2016YFA0201300 ), the Natural Science Foundation of China (Grant Nos. 21475125 and 21675146 ) and the Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YZ201666 ). C.L. thanks Y. Tian (from Jilin University) for the FDTD simulation of the electric field distribution and Z.Q. Wang and X.H. Li (all from Northeast Normal University) for facilitating the temperature-dependent I-V measurement. Y.J. acknowledges support from the National Key Research and Development Program of China (Grant No. 2016YFA0201300), the Natural Science Foundation of China (Grant Nos.21475125 and 21675146) and the Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YZ201666). Y.J. conceived and designed the project. C.L. prepared the nanomaterials and devices, conducted the structural and optical characterizations, and performed electrical measurements. C.L. P.W. H.L. J.Z. D.C. and Y.J. analyzed and discussed the data. Y.J. C.L. and D.C. wrote the paper. The authors declare no competing interests.

FundersFunder number
National Natural Science Foundation of China21475125, 21675146
Chinese Academy of SciencesYZ201666
National Basic Research Program of China (973 Program)2016YFA0201300

    Keywords

    • Electronic Materials
    • Materials Science
    • Nanomaterials

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