Abstract
Junctions built from metallic nanoparticles (NPs) can circumvent the diffraction limit and combine molecular/nanoelectronics with plasmonics. However, experimental advances in plasmon-assisted electron transport at the nanoscale have been limited. We construct junctions of a robust, molecule-free, suspended film, built solely from AuNPs, capped by SiO2 shells (Au@SiO2), which give insulating tunneling gaps up to 3.6 nm between the NPs. Current measured across monolayers of such AuNPs shows ultra-long-range, plasmon-enabled electron transport (P-transport), beyond the range of normal electron tunneling across insulators. This finding challenges the present understanding of electron transport in such systems and opens possibilities for future combinations of plasmonics and nanoelectronics.
| Original language | English |
|---|---|
| Pages (from-to) | 213-221 |
| Number of pages | 9 |
| Journal | iScience |
| Volume | 8 |
| DOIs | |
| State | Published - 26 Oct 2018 |
| Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2018 The Author(s)
Funding
C.L. thanks Y. Tian (from Jilin University) for the FDTD simulation of the electric field distribution and Z.Q. Wang and X.H. Li (all from Northeast Normal University) for facilitating the temperature-dependent I-V measurement. Y.J. acknowledges support from the National Key Research and Development Program of China (Grant No. 2016YFA0201300 ), the Natural Science Foundation of China (Grant Nos. 21475125 and 21675146 ) and the Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YZ201666 ). C.L. thanks Y. Tian (from Jilin University) for the FDTD simulation of the electric field distribution and Z.Q. Wang and X.H. Li (all from Northeast Normal University) for facilitating the temperature-dependent I-V measurement. Y.J. acknowledges support from the National Key Research and Development Program of China (Grant No. 2016YFA0201300), the Natural Science Foundation of China (Grant Nos.21475125 and 21675146) and the Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YZ201666). Y.J. conceived and designed the project. C.L. prepared the nanomaterials and devices, conducted the structural and optical characterizations, and performed electrical measurements. C.L. P.W. H.L. J.Z. D.C. and Y.J. analyzed and discussed the data. Y.J. C.L. and D.C. wrote the paper. The authors declare no competing interests.
| Funders | Funder number |
|---|---|
| National Natural Science Foundation of China | 21475125, 21675146 |
| Chinese Academy of Sciences | YZ201666 |
| National Basic Research Program of China (973 Program) | 2016YFA0201300 |
Keywords
- Electronic Materials
- Materials Science
- Nanomaterials
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