Planar Hall-effect magnetic random access memory

Y. Bason; L. Klein; J. B. Yau; X. Hong; J. Hoffman; C. H. Ahn

doi:10.1063/1.2162824

Planar Hall-effect magnetic random access memory

Y. Bason, L. Klein, J. B. Yau, X. Hong, J. Hoffman, C. H. Ahn

Department of Physics

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

We suggest a type of magnetic random access memory (MRAM) that is based on the phenomenon of the planar Hall effect (PHE) in magnetic films, and we demonstrate this idea with manganite films. The PHE-MRAM is structurally simpler than the currently developed MRAM that is based on magnetoresistance tunnel junctions, with the tunnel junction structure being replaced by a single-layer film.

Original language	English
Article number	08R701
Journal	Journal of Applied Physics
Volume	99
Issue number	8
DOIs	https://doi.org/10.1063/1.2162824
State	Published - 2006

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Planar Hall-effect magnetic random access memory

Abstract

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