Planar Hall-effect magnetic random access memory

Y. Bason, L. Klein, J. B. Yau, X. Hong, J. Hoffman, C. H. Ahn

Research output: Contribution to journalArticlepeer-review

46 Scopus citations

Abstract

We suggest a type of magnetic random access memory (MRAM) that is based on the phenomenon of the planar Hall effect (PHE) in magnetic films, and we demonstrate this idea with manganite films. The PHE-MRAM is structurally simpler than the currently developed MRAM that is based on magnetoresistance tunnel junctions, with the tunnel junction structure being replaced by a single-layer film.

Original languageEnglish
Article number08R701
JournalJournal of Applied Physics
Volume99
Issue number8
DOIs
StatePublished - 2006

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