Planar Hall effect in epitaxial thin films of magnetite

Y. Bason; L. Klein; H. Q. Wang; J. Hoffman; X. Hong; V. E. Henrich; C. H. Ahn

doi:10.1063/1.2712053

Planar Hall effect in epitaxial thin films of magnetite

Y. Bason, L. Klein, H. Q. Wang, J. Hoffman, X. Hong, V. E. Henrich, C. H. Ahn

Department of Physics

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17 Scopus citations

Abstract

We measured the planar Hall effect (PHE) of magnetite (Fe3 O4) films between 150 and 350 K. The PHE was measured both with a constant magnetic field rotating in the plane of the sample and in a remanent state after applying a field in specific directions. The PHE amplitude decreases with temperature; however, it changes little between 300 and 350 K. The remanent PHE signal is as high as 10 VA, larger than previously observed in manganite films. We also measured the PHE in the remanent state and found that its magnitude and stability make it a viable candidate for magnetic random access memory applications.

Original language	English
Article number	09J507
Journal	Journal of Applied Physics
Volume	101
Issue number	9
DOIs	https://doi.org/10.1063/1.2712053
State	Published - 2007

Bibliographical note

Funding Information:
One of the authors (L.K.) acknowledges support by the Israel Science Foundation founded by the Israel Academy of Sciences and Humanities. Another author (C. A.) acknowledges primary support from the National Science Foundation under Contract Nos. MRSEC DMR 0520495 and DMR 0134721 and ONR, along with support from the Packard and Sloan Foundations. Another one of the author (V.E.H.) acknowledges support from the National Science Foundation under Contract No. MRSEC DMR 0520495 and the U.S. Department of Energy Grant No. DE-FG02-OOER45844.

Funding

One of the authors (L.K.) acknowledges support by the Israel Science Foundation founded by the Israel Academy of Sciences and Humanities. Another author (C. A.) acknowledges primary support from the National Science Foundation under Contract Nos. MRSEC DMR 0520495 and DMR 0134721 and ONR, along with support from the Packard and Sloan Foundations. Another one of the author (V.E.H.) acknowledges support from the National Science Foundation under Contract No. MRSEC DMR 0520495 and the U.S. Department of Energy Grant No. DE-FG02-OOER45844.

Funders	Funder number
Packard and Sloan Foundations
National Science Foundation	MRSEC DMR 0520495, DMR 0134721
Office of Naval Research
U.S. Department of Energy	DE-FG02-OOER45844
Israel Academy of Sciences and Humanities
Israel Science Foundation

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abstract = "We measured the planar Hall effect (PHE) of magnetite (Fe3 O4) films between 150 and 350 K. The PHE was measured both with a constant magnetic field rotating in the plane of the sample and in a remanent state after applying a field in specific directions. The PHE amplitude decreases with temperature; however, it changes little between 300 and 350 K. The remanent PHE signal is as high as 10 VA, larger than previously observed in manganite films. We also measured the PHE in the remanent state and found that its magnitude and stability make it a viable candidate for magnetic random access memory applications.",

author = "Y. Bason and L. Klein and Wang, {H. Q.} and J. Hoffman and X. Hong and Henrich, {V. E.} and Ahn, {C. H.}",

note = "Funding Information: One of the authors (L.K.) acknowledges support by the Israel Science Foundation founded by the Israel Academy of Sciences and Humanities. Another author (C. A.) acknowledges primary support from the National Science Foundation under Contract Nos. MRSEC DMR 0520495 and DMR 0134721 and ONR, along with support from the Packard and Sloan Foundations. Another one of the author (V.E.H.) acknowledges support from the National Science Foundation under Contract No. MRSEC DMR 0520495 and the U.S. Department of Energy Grant No. DE-FG02-OOER45844.",

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doi = "10.1063/1.2712053",

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AU - Klein, L.

AU - Wang, H. Q.

AU - Hoffman, J.

AU - Hong, X.

AU - Henrich, V. E.

AU - Ahn, C. H.

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PY - 2007

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Planar Hall effect in epitaxial thin films of magnetite

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