Pinhole mediated electrical transport across LaTiO3/SrTiO 3 and LaAlO3/SrTiO3 oxide hetero-structures

Pramod Kumar; Anjana Dogra; Vijaykumar Toutam

doi:10.1063/1.4831685

Pinhole mediated electrical transport across LaTiO₃/SrTiO ₃ and LaAlO₃/SrTiO₃ oxide hetero-structures

Pramod Kumar
, Anjana Dogra
, Vijaykumar Toutam

CSIR - National Physical Laboratory

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Metal-insulator-metal configuration of LaTiO₃/SrTiO₃ and LaAlO₃/SrTiO₃ hetero-structures between two dimensional electron gas formed at the interface and different area top electrodes is employed for Conductive Atomic force microscopy (CAFM) imaging, Current-Voltage (I-V), and Capacitance-Voltage (C-V) spectroscopy. Electrode area dependent I-V characteristics are observed for these oxide hetero-structures. With small area electrodes, rectifying I-V characteristics are observed, compared to, both tunneling and leakage current characteristics for large area electrodes. CAFM mapping confirmed the presence of pinholes on both surfaces. Resultant I-V characteristics have a contribution from both tunneling and leakage due to pinholes.

Original language	English
Article number	211601
Journal	Applied Physics Letters
Volume	103
Issue number	21
DOIs	https://doi.org/10.1063/1.4831685
State	Published - 18 Nov 2013
Externally published	Yes

Bibliographical note

Funding Information:
Authors are grateful to Professor R. C. Budhani, Director NPL for his suggestions. Dr. Toutam acknowledges CSIR for financial support. Authors would like to thank Dr. H. K. Singh and Dr. V. P. S. Awana for RT measurements and Dr. Sushil Kumar for availing C-V Spectroscopy facility. P.K. acknowledges financial assistance in the form of CSIR-SRF. A.D. acknowledges funding from IFCPAR.

Funding

Authors are grateful to Professor R. C. Budhani, Director NPL for his suggestions. Dr. Toutam acknowledges CSIR for financial support. Authors would like to thank Dr. H. K. Singh and Dr. V. P. S. Awana for RT measurements and Dr. Sushil Kumar for availing C-V Spectroscopy facility. P.K. acknowledges financial assistance in the form of CSIR-SRF. A.D. acknowledges funding from IFCPAR.

Funders
CSIR-SRF
Council of Scientific and Industrial Research, India
Indo-French Centre for the Promotion of Advanced Research

Access to Document

10.1063/1.4831685

Cite this

@article{d90ce39967d846ac95ec197adccee5c8,

title = "Pinhole mediated electrical transport across LaTiO3/SrTiO 3 and LaAlO3/SrTiO3 oxide hetero-structures",

abstract = "Metal-insulator-metal configuration of LaTiO3/SrTiO3 and LaAlO3/SrTiO3 hetero-structures between two dimensional electron gas formed at the interface and different area top electrodes is employed for Conductive Atomic force microscopy (CAFM) imaging, Current-Voltage (I-V), and Capacitance-Voltage (C-V) spectroscopy. Electrode area dependent I-V characteristics are observed for these oxide hetero-structures. With small area electrodes, rectifying I-V characteristics are observed, compared to, both tunneling and leakage current characteristics for large area electrodes. CAFM mapping confirmed the presence of pinholes on both surfaces. Resultant I-V characteristics have a contribution from both tunneling and leakage due to pinholes.",

author = "Pramod Kumar and Anjana Dogra and Vijaykumar Toutam",

note = "Funding Information: Authors are grateful to Professor R. C. Budhani, Director NPL for his suggestions. Dr. Toutam acknowledges CSIR for financial support. Authors would like to thank Dr. H. K. Singh and Dr. V. P. S. Awana for RT measurements and Dr. Sushil Kumar for availing C-V Spectroscopy facility. P.K. acknowledges financial assistance in the form of CSIR-SRF. A.D. acknowledges funding from IFCPAR.",

year = "2013",

month = nov,

day = "18",

doi = "10.1063/1.4831685",

language = "אנגלית",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "21",

}

TY - JOUR

T1 - Pinhole mediated electrical transport across LaTiO3/SrTiO 3 and LaAlO3/SrTiO3 oxide hetero-structures

AU - Kumar, Pramod

AU - Dogra, Anjana

AU - Toutam, Vijaykumar

N1 - Funding Information: Authors are grateful to Professor R. C. Budhani, Director NPL for his suggestions. Dr. Toutam acknowledges CSIR for financial support. Authors would like to thank Dr. H. K. Singh and Dr. V. P. S. Awana for RT measurements and Dr. Sushil Kumar for availing C-V Spectroscopy facility. P.K. acknowledges financial assistance in the form of CSIR-SRF. A.D. acknowledges funding from IFCPAR.

PY - 2013/11/18

Y1 - 2013/11/18

N2 - Metal-insulator-metal configuration of LaTiO3/SrTiO3 and LaAlO3/SrTiO3 hetero-structures between two dimensional electron gas formed at the interface and different area top electrodes is employed for Conductive Atomic force microscopy (CAFM) imaging, Current-Voltage (I-V), and Capacitance-Voltage (C-V) spectroscopy. Electrode area dependent I-V characteristics are observed for these oxide hetero-structures. With small area electrodes, rectifying I-V characteristics are observed, compared to, both tunneling and leakage current characteristics for large area electrodes. CAFM mapping confirmed the presence of pinholes on both surfaces. Resultant I-V characteristics have a contribution from both tunneling and leakage due to pinholes.

AB - Metal-insulator-metal configuration of LaTiO3/SrTiO3 and LaAlO3/SrTiO3 hetero-structures between two dimensional electron gas formed at the interface and different area top electrodes is employed for Conductive Atomic force microscopy (CAFM) imaging, Current-Voltage (I-V), and Capacitance-Voltage (C-V) spectroscopy. Electrode area dependent I-V characteristics are observed for these oxide hetero-structures. With small area electrodes, rectifying I-V characteristics are observed, compared to, both tunneling and leakage current characteristics for large area electrodes. CAFM mapping confirmed the presence of pinholes on both surfaces. Resultant I-V characteristics have a contribution from both tunneling and leakage due to pinholes.

UR - https://www.scopus.com/pages/publications/84888401137

U2 - 10.1063/1.4831685

DO - 10.1063/1.4831685

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:84888401137

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 211601

ER -