Physical principles of new devices related to giant electric field effect in MDS structure

M. Levin, V. Sandomirsky, I. Schlimak

Research output: Contribution to journalConference articlepeer-review


If MDS structure with thin paraelectric and ferroelectric films as the gate insulator is created, modes of states in the semiconductor substrates are attained. At the electric field E≈(2-2.5)·105 V/cm, the storage charges Q≈100 fC/μm2 or Q≈7.1013 e/cm2 are attained which surpasses as much as as two orders of magnitude the `surface charge' of the standard current MDS. The induced p-n junction in the study is the tunnel p-n junction. Parameters of the tunnel p-n junction can be controlled by electric field effect (EFE). Based on the calculated parameters of an imaginary MDS, the gate dielectric has the permittivity εd = 300 and the thickness Ld = 600 angstroms, the semiconductor is p-GaAs with the acceptor concentration Na = 1020 cm-3, its εs = 13.1.

Original languageEnglish
Pages (from-to)29-31
Number of pages3
JournalSolid State Phenomena
StatePublished - 1997
EventProceedings of the 1996 3rd International Conference and Intensive Tutorial Course on Semiconductor Materials and Technology, ICSMT'96 - New Delhi, India
Duration: 1 Dec 19961 Dec 1996


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