Physical principles of new devices related to giant electric field effect in MDS structure

M. Levin; V. Sandomirsky; I. Schlimak

doi:10.4028/www.scientific.net/ssp.55.29

Physical principles of new devices related to giant electric field effect in MDS structure

M. Levin, V. Sandomirsky, I. Schlimak

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

If MDS structure with thin paraelectric and ferroelectric films as the gate insulator is created, modes of states in the semiconductor substrates are attained. At the electric field E≈(2-2.5)·10⁵ V/cm, the storage charges Q≈100 fC/μm² or Q≈7.10¹³ e/cm² are attained which surpasses as much as as two orders of magnitude the `surface charge' of the standard current MDS. The induced p-n junction in the study is the tunnel p-n junction. Parameters of the tunnel p-n junction can be controlled by electric field effect (EFE). Based on the calculated parameters of an imaginary MDS, the gate dielectric has the permittivity ε_d = 300 and the thickness L_d = 600 angstroms, the semiconductor is p-GaAs with the acceptor concentration N_a = 10²⁰ cm^-3, its ε_s = 13.1.

Original language	English
Pages (from-to)	29-31
Number of pages	3
Journal	Solid State Phenomena
Volume	55
DOIs	https://doi.org/10.4028/www.scientific.net/ssp.55.29
State	Published - 1997
Event	Proceedings of the 1996 3rd International Conference and Intensive Tutorial Course on Semiconductor Materials and Technology, ICSMT'96 - New Delhi, India Duration: 1 Dec 1996 → 1 Dec 1996

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title = "Physical principles of new devices related to giant electric field effect in MDS structure",

abstract = "If MDS structure with thin paraelectric and ferroelectric films as the gate insulator is created, modes of states in the semiconductor substrates are attained. At the electric field E≈(2-2.5)·105 V/cm, the storage charges Q≈100 fC/μm2 or Q≈7.1013 e/cm2 are attained which surpasses as much as as two orders of magnitude the `surface charge' of the standard current MDS. The induced p-n junction in the study is the tunnel p-n junction. Parameters of the tunnel p-n junction can be controlled by electric field effect (EFE). Based on the calculated parameters of an imaginary MDS, the gate dielectric has the permittivity εd = 300 and the thickness Ld = 600 angstroms, the semiconductor is p-GaAs with the acceptor concentration Na = 1020 cm-3, its εs = 13.1.",

author = "M. Levin and V. Sandomirsky and I. Schlimak",

year = "1997",

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AU - Levin, M.

AU - Sandomirsky, V.

AU - Schlimak, I.

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N2 - If MDS structure with thin paraelectric and ferroelectric films as the gate insulator is created, modes of states in the semiconductor substrates are attained. At the electric field E≈(2-2.5)·105 V/cm, the storage charges Q≈100 fC/μm2 or Q≈7.1013 e/cm2 are attained which surpasses as much as as two orders of magnitude the `surface charge' of the standard current MDS. The induced p-n junction in the study is the tunnel p-n junction. Parameters of the tunnel p-n junction can be controlled by electric field effect (EFE). Based on the calculated parameters of an imaginary MDS, the gate dielectric has the permittivity εd = 300 and the thickness Ld = 600 angstroms, the semiconductor is p-GaAs with the acceptor concentration Na = 1020 cm-3, its εs = 13.1.

AB - If MDS structure with thin paraelectric and ferroelectric films as the gate insulator is created, modes of states in the semiconductor substrates are attained. At the electric field E≈(2-2.5)·105 V/cm, the storage charges Q≈100 fC/μm2 or Q≈7.1013 e/cm2 are attained which surpasses as much as as two orders of magnitude the `surface charge' of the standard current MDS. The induced p-n junction in the study is the tunnel p-n junction. Parameters of the tunnel p-n junction can be controlled by electric field effect (EFE). Based on the calculated parameters of an imaginary MDS, the gate dielectric has the permittivity εd = 300 and the thickness Ld = 600 angstroms, the semiconductor is p-GaAs with the acceptor concentration Na = 1020 cm-3, its εs = 13.1.

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Physical principles of new devices related to giant electric field effect in MDS structure

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