TY - JOUR
T1 - Physical principles of new devices related to giant electric field effect in MDS structure
AU - Levin, M.
AU - Sandomirsky, V.
AU - Schlimak, I.
PY - 1997
Y1 - 1997
N2 - If MDS structure with thin paraelectric and ferroelectric films as the gate insulator is created, modes of states in the semiconductor substrates are attained. At the electric field E≈(2-2.5)·105 V/cm, the storage charges Q≈100 fC/μm2 or Q≈7.1013 e/cm2 are attained which surpasses as much as as two orders of magnitude the `surface charge' of the standard current MDS. The induced p-n junction in the study is the tunnel p-n junction. Parameters of the tunnel p-n junction can be controlled by electric field effect (EFE). Based on the calculated parameters of an imaginary MDS, the gate dielectric has the permittivity εd = 300 and the thickness Ld = 600 angstroms, the semiconductor is p-GaAs with the acceptor concentration Na = 1020 cm-3, its εs = 13.1.
AB - If MDS structure with thin paraelectric and ferroelectric films as the gate insulator is created, modes of states in the semiconductor substrates are attained. At the electric field E≈(2-2.5)·105 V/cm, the storage charges Q≈100 fC/μm2 or Q≈7.1013 e/cm2 are attained which surpasses as much as as two orders of magnitude the `surface charge' of the standard current MDS. The induced p-n junction in the study is the tunnel p-n junction. Parameters of the tunnel p-n junction can be controlled by electric field effect (EFE). Based on the calculated parameters of an imaginary MDS, the gate dielectric has the permittivity εd = 300 and the thickness Ld = 600 angstroms, the semiconductor is p-GaAs with the acceptor concentration Na = 1020 cm-3, its εs = 13.1.
UR - http://www.scopus.com/inward/record.url?scp=0031354209&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/ssp.55.29
DO - 10.4028/www.scientific.net/ssp.55.29
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AN - SCOPUS:0031354209
SN - 1012-0394
VL - 55
SP - 29
EP - 31
JO - Solid State Phenomena
JF - Solid State Phenomena
T2 - Proceedings of the 1996 3rd International Conference and Intensive Tutorial Course on Semiconductor Materials and Technology, ICSMT'96
Y2 - 1 December 1996 through 1 December 1996
ER -