Abstract
Results of investigating the migration of Li ions in p-type Ge at 77K under the influence of light are reported.
| Original language | English |
|---|---|
| Pages (from-to) | 698-699 |
| Number of pages | 2 |
| Journal | Semiconductors |
| Volume | 7 |
| Issue number | 5 |
| State | Published - 1973 |