PHOTOSTIMULATED MIGRATION OF LITHIUM IN GERMANIUM.

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Abstract

Results of investigating the migration of Li ions in p-type Ge at 77K under the influence of light are reported.

Original language	English
Pages (from-to)	698-699
Number of pages	2
Journal	Soviet physics. Semiconductors
Volume	7
Issue number	5
State	Published - 1973

@article{92056436ba99483eb80f2a1ff422e0a5,

title = "PHOTOSTIMULATED MIGRATION OF LITHIUM IN GERMANIUM.",

abstract = "Results of investigating the migration of Li ions in p-type Ge at 77K under the influence of light are reported.",

author = "Kastal'skii, \{A. A.\} and Shlimak, \{I. S.\} and Gadzhiev, \{A. R.\}",

year = "1973",

language = "אנגלית",

volume = "7",

pages = "698--699",

journal = "Soviet physics. Semiconductors",

issn = "0038-5700",

publisher = "American Institute of Physics",

number = "5",

}

TY - JOUR

T1 - PHOTOSTIMULATED MIGRATION OF LITHIUM IN GERMANIUM.

AU - Kastal'skii, A. A.

AU - Shlimak, I. S.

AU - Gadzhiev, A. R.

PY - 1973

Y1 - 1973

N2 - Results of investigating the migration of Li ions in p-type Ge at 77K under the influence of light are reported.

AB - Results of investigating the migration of Li ions in p-type Ge at 77K under the influence of light are reported.

UR - https://www.scopus.com/pages/publications/0015679309

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AN - SCOPUS:0015679309

SN - 0038-5700

VL - 7

SP - 698

EP - 699

JO - Soviet physics. Semiconductors

JF - Soviet physics. Semiconductors

IS - 5

ER -