Photoluminescence studies of CuInSe2: Identification of intrinsic defect levels

Fouad Abou-Elfotouh; D. J. Dunlavy; David Cahen; R. Noufi; L. L. Kazmerski; K. J. Bachmann

doi:10.1016/0146-3535(84)90057-1

Photoluminescence studies of CuInSe₂: Identification of intrinsic defect levels

Fouad Abou-Elfotouh
, D. J. Dunlavy
, David Cahen
, R. Noufi
, L. L. Kazmerski
, K. J. Bachmann

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

Photoluminescence (PL) has been used to determine the emission bands in Se-deficient CuInSe₂ single crystals that were either Cu- or In-rich. Data are presented for n- and p-type crystals over the temperature range of 7-300°K. The interpretation of these PL data is based mainly on electron microprobe and Auger electron spectroscopy compositional measurements. The origins of these defect levels, that are used in this interpretation are proposed and discussed.

Original language	English
Pages (from-to)	365-370
Number of pages	6
Journal	Progress in Crystal Growth and Characterization
Volume	10
Issue number	C
DOIs	https://doi.org/10.1016/0146-3535(84)90057-1
State	Published - 1984
Externally published	Yes

Funding

The authors gratefully acknowledge the analytical contributions of Charles Herrington and Amy Swartzlander of SERI. D.C. thanks Satyen K. Deb (SERI) for enlightening discussions. This work was supported in part by the U.S. Department Energy under contract number EG-77-C01-4042.

Funders	Funder number
U.S. Department of Energy	EG-77-C01-4042

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10.1016/0146-3535(84)90057-1

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abstract = "Photoluminescence (PL) has been used to determine the emission bands in Se-deficient CuInSe2 single crystals that were either Cu- or In-rich. Data are presented for n- and p-type crystals over the temperature range of 7-300°K. The interpretation of these PL data is based mainly on electron microprobe and Auger electron spectroscopy compositional measurements. The origins of these defect levels, that are used in this interpretation are proposed and discussed.",

author = "Fouad Abou-Elfotouh and Dunlavy, \{D. J.\} and David Cahen and R. Noufi and Kazmerski, \{L. L.\} and Bachmann, \{K. J.\}",

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TY - JOUR

T1 - Photoluminescence studies of CuInSe2

T2 - Identification of intrinsic defect levels

AU - Abou-Elfotouh, Fouad

AU - Dunlavy, D. J.

AU - Cahen, David

AU - Noufi, R.

AU - Kazmerski, L. L.

AU - Bachmann, K. J.

PY - 1984

Y1 - 1984

N2 - Photoluminescence (PL) has been used to determine the emission bands in Se-deficient CuInSe2 single crystals that were either Cu- or In-rich. Data are presented for n- and p-type crystals over the temperature range of 7-300°K. The interpretation of these PL data is based mainly on electron microprobe and Auger electron spectroscopy compositional measurements. The origins of these defect levels, that are used in this interpretation are proposed and discussed.

AB - Photoluminescence (PL) has been used to determine the emission bands in Se-deficient CuInSe2 single crystals that were either Cu- or In-rich. Data are presented for n- and p-type crystals over the temperature range of 7-300°K. The interpretation of these PL data is based mainly on electron microprobe and Auger electron spectroscopy compositional measurements. The origins of these defect levels, that are used in this interpretation are proposed and discussed.

UR - https://www.scopus.com/pages/publications/0021572501

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DO - 10.1016/0146-3535(84)90057-1

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AN - SCOPUS:0021572501

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JO - Progress in Crystal Growth and Characterization

JF - Progress in Crystal Growth and Characterization

IS - C

ER -

Photoluminescence studies of CuInSe₂: Identification of intrinsic defect levels

Abstract

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