Photoluminescence studies of CuInSe2: Identification of intrinsic defect levels

Fouad Abou-Elfotouh, D. J. Dunlavy, David Cahen, R. Noufi, L. L. Kazmerski, K. J. Bachmann

Research output: Contribution to journalArticlepeer-review

40 Scopus citations

Abstract

Photoluminescence (PL) has been used to determine the emission bands in Se-deficient CuInSe2 single crystals that were either Cu- or In-rich. Data are presented for n- and p-type crystals over the temperature range of 7-300°K. The interpretation of these PL data is based mainly on electron microprobe and Auger electron spectroscopy compositional measurements. The origins of these defect levels, that are used in this interpretation are proposed and discussed.

Original languageEnglish
Pages (from-to)365-370
Number of pages6
JournalProgress in Crystal Growth and Characterization
Volume10
Issue numberC
DOIs
StatePublished - 1984
Externally publishedYes

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