Photoluminescence ring formation in coupled quantum wells: Excitonic versus ambipolar diffusion

M. Stern, V. Garmider, E. Segre, M. Rappaport, V. Umansky, Y. Levinson, I. Bar-Joseph

Research output: Contribution to journalArticlepeer-review

31 Scopus citations

Abstract

In this Letter, we study the diffusion properties of photoexcited carriers in coupled quantum wells around the Mott transition. We find that the diffusion of unbound electrons and holes is ambipolar and is characterized by a large diffusion coefficient, similar to that found in p-i-n junctions. Correlation effects in the excitonic phase are found to significantly suppress the carriers' diffusion. We show that this difference in diffusion properties gives rise to the appearance of a photoluminescence ring pattern around the excitation spot at the Mott transition.

Original languageEnglish
Article number257402
JournalPhysical Review Letters
Volume101
Issue number25
DOIs
StatePublished - 15 Dec 2008
Externally publishedYes

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