Photoluminescence and Recombination of Excess Carriers in Amorphous Hydrogenated Silicon

A. A. Andreev; A. V. Zherzdev; A. I. Kosarev; K. V. Kougia; I. S. Shlimak

doi:10.1002/pssb.2221270127

Photoluminescence and Recombination of Excess Carriers in Amorphous Hydrogenated Silicon

A. A. Andreev
, A. V. Zherzdev
, A. I. Kosarev
, K. V. Kougia
, I. S. Shlimak

RAS - Ioffe Physico Technical Institute

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Concomitant simultaneous investigations of both, photoluminescence (PL) and photoconductivity (PC) decay from steady‐state levels are carried out for the first time under the same conditions for the same a‐Si:H samples. It is found that there is no competition between radiative and non‐radiative recombination channels for excess carriers. A general model of tunnel distant‐pair recombination based on the experimental data is proposed for explanation of both, PL and PC.

Original language	English
Pages (from-to)	273-278
Number of pages	6
Journal	Physica Status Solidi (B): Basic Research
Volume	127
Issue number	1
DOIs	https://doi.org/10.1002/pssb.2221270127
State	Published - 1 Jan 1985
Externally published	Yes

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AU - Shlimak, I. S.

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AB - Concomitant simultaneous investigations of both, photoluminescence (PL) and photoconductivity (PC) decay from steady‐state levels are carried out for the first time under the same conditions for the same a‐Si:H samples. It is found that there is no competition between radiative and non‐radiative recombination channels for excess carriers. A general model of tunnel distant‐pair recombination based on the experimental data is proposed for explanation of both, PL and PC.

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Photoluminescence and Recombination of Excess Carriers in Amorphous Hydrogenated Silicon

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