Photoluminescence and Recombination of Excess Carriers in Amorphous Hydrogenated Silicon

A. A. Andreev; A. V. Zherzdev; A. I. Kosarev; K. V. Kougia; I. S. Shlimak

doi:10.1002/pssb.2221270127

Photoluminescence and Recombination of Excess Carriers in Amorphous Hydrogenated Silicon

A. A. Andreev, A. V. Zherzdev, A. I. Kosarev, K. V. Kougia, I. S. Shlimak

RAS - Ioffe Physico Technical Institute

Research output: Contribution to journal › Article › peer-review

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Abstract

Concomitant simultaneous investigations of both, photoluminescence (PL) and photoconductivity (PC) decay from steady‐state levels are carried out for the first time under the same conditions for the same a‐Si:H samples. It is found that there is no competition between radiative and non‐radiative recombination channels for excess carriers. A general model of tunnel distant‐pair recombination based on the experimental data is proposed for explanation of both, PL and PC.

Original language	English
Pages (from-to)	273-278
Number of pages	6
Journal	Physica Status Solidi (B): Basic Research
Volume	127
Issue number	1
DOIs	https://doi.org/10.1002/pssb.2221270127
State	Published - 1 Jan 1985
Externally published	Yes

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AU - Shlimak, I. S.

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Photoluminescence and Recombination of Excess Carriers in Amorphous Hydrogenated Silicon

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