Photoinduced intersubband absorption in n-type well- and barrier-doped quantum wells

Y. Garini; E. Cohen; E. Ehrenfreund; Arza Ron; K. K. Law; J. L. Merz; A. C. Gossard

doi:10.1016/0039-6028(92)90409-Y

Photoinduced intersubband absorption in n-type well- and barrier-doped quantum wells

Y. Garini, E. Cohen, E. Ehrenfreund, Arza Ron, K. K. Law, J. L. Merz, A. C. Gossard

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Using infrared (IR) photomodulation spectroscopy in lightly doped GaAs/AlGaAs multiple quantum wells (MQW), we study the changes in the e1-e2 intersubband absorption due to the interband excitations. For the barrier doped MQWs, we find that an impurity level which is ∼ 60 meV below the barrier band-gap, strongly affects both the shape and intensity of the intersubband transitions. No such effects are observed in the well-doped MQWs.

Original language	English
Pages (from-to)	561-564
Number of pages	4
Journal	Surface Science
Volume	263
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(92)90409-Y
State	Published - 19 Feb 1992
Externally published	Yes

Bibliographical note

Funding Information:
The work at the Tcchnion was supported by the US-Israel Binational Science Foundation (BSF), Jerusalem, Israel and by the Technion Fund for the Promotion of Research. The work at UCSB was supported by the National Science Foundation Science and Technology Center, QUEST.

Access to Document

10.1016/0039-6028(92)90409-Y

Cite this

@article{7a243e1a04eb4801a338bbd1a2aeba91,

title = "Photoinduced intersubband absorption in n-type well- and barrier-doped quantum wells",

abstract = "Using infrared (IR) photomodulation spectroscopy in lightly doped GaAs/AlGaAs multiple quantum wells (MQW), we study the changes in the e1-e2 intersubband absorption due to the interband excitations. For the barrier doped MQWs, we find that an impurity level which is ∼ 60 meV below the barrier band-gap, strongly affects both the shape and intensity of the intersubband transitions. No such effects are observed in the well-doped MQWs.",

author = "Y. Garini and E. Cohen and E. Ehrenfreund and Arza Ron and Law, {K. K.} and Merz, {J. L.} and Gossard, {A. C.}",

note = "Funding Information: The work at the Tcchnion was supported by the US-Israel Binational Science Foundation (BSF), Jerusalem, Israel and by the Technion Fund for the Promotion of Research. The work at UCSB was supported by the National Science Foundation Science and Technology Center, QUEST.",

year = "1992",

month = feb,

day = "19",

doi = "10.1016/0039-6028(92)90409-Y",

language = "אנגלית",

volume = "263",

pages = "561--564",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier",

number = "1-3",

}

TY - JOUR

T1 - Photoinduced intersubband absorption in n-type well- and barrier-doped quantum wells

AU - Garini, Y.

AU - Cohen, E.

AU - Ehrenfreund, E.

AU - Ron, Arza

AU - Law, K. K.

AU - Merz, J. L.

AU - Gossard, A. C.

N1 - Funding Information: The work at the Tcchnion was supported by the US-Israel Binational Science Foundation (BSF), Jerusalem, Israel and by the Technion Fund for the Promotion of Research. The work at UCSB was supported by the National Science Foundation Science and Technology Center, QUEST.

PY - 1992/2/19

Y1 - 1992/2/19

N2 - Using infrared (IR) photomodulation spectroscopy in lightly doped GaAs/AlGaAs multiple quantum wells (MQW), we study the changes in the e1-e2 intersubband absorption due to the interband excitations. For the barrier doped MQWs, we find that an impurity level which is ∼ 60 meV below the barrier band-gap, strongly affects both the shape and intensity of the intersubband transitions. No such effects are observed in the well-doped MQWs.

AB - Using infrared (IR) photomodulation spectroscopy in lightly doped GaAs/AlGaAs multiple quantum wells (MQW), we study the changes in the e1-e2 intersubband absorption due to the interband excitations. For the barrier doped MQWs, we find that an impurity level which is ∼ 60 meV below the barrier band-gap, strongly affects both the shape and intensity of the intersubband transitions. No such effects are observed in the well-doped MQWs.

UR - http://www.scopus.com/inward/record.url?scp=0026818223&partnerID=8YFLogxK

U2 - 10.1016/0039-6028(92)90409-Y

DO - 10.1016/0039-6028(92)90409-Y

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0026818223

SN - 0039-6028

VL - 263

SP - 561

EP - 564

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Photoinduced intersubband absorption in n-type well- and barrier-doped quantum wells

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this