Photoinduced intersubband absorption in n-doped quantum wells

Y. Garini; E. Cohen; Arza Ron; E. Ehrenfreund; K. K. Law; J. L. Merz; A. C. Gossard

doi:10.1016/0022-2313(92)90158-6

Photoinduced intersubband absorption in n-doped quantum wells

Y. Garini, E. Cohen, Arza Ron, E. Ehrenfreund, K. K. Law, J. L. Merz, A. C. Gossard

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the study of Si-doped GaAs/AlGaAs narrow multiquantum wells (MQWs) using the intersubband photoinduced absorption technique. For the barrier-doped MQWs, we find thatan impurity level which is ∼ 60 meV below the barrier band gap, causes a photoinduced reduction ("bleaching") in the e1-e2 intersubband absorption. This is not observed for the MQWs doped in the well. For a Si-doped level of ∼ 2.5 ×10¹⁶ cm^-3 (in the barriers), we estimate the density of the impurities causing the bleaching to be of the order of 2 ×10⁸ cm^-2 per barrier.

Original language	English
Pages (from-to)	288-292
Number of pages	5
Journal	Journal of Luminescence
Volume	53
Issue number	1-6
DOIs	https://doi.org/10.1016/0022-2313(92)90158-6
State	Published - Jul 1992
Externally published	Yes

Bibliographical note

Funding Information:
supported by the National Science Foundation Science and Technology Center, QUEST.

Funding

supported by the National Science Foundation Science and Technology Center, QUEST.

Funders	Funder number
National Science Foundation Science and Technology Center
QUEST

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Cite this

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title = "Photoinduced intersubband absorption in n-doped quantum wells",

abstract = "We report on the study of Si-doped GaAs/AlGaAs narrow multiquantum wells (MQWs) using the intersubband photoinduced absorption technique. For the barrier-doped MQWs, we find thatan impurity level which is ∼ 60 meV below the barrier band gap, causes a photoinduced reduction ({"}bleaching{"}) in the e1-e2 intersubband absorption. This is not observed for the MQWs doped in the well. For a Si-doped level of ∼ 2.5 ×1016 cm-3 (in the barriers), we estimate the density of the impurities causing the bleaching to be of the order of 2 ×108 cm-2 per barrier.",

author = "Y. Garini and E. Cohen and Arza Ron and E. Ehrenfreund and Law, {K. K.} and Merz, {J. L.} and Gossard, {A. C.}",

note = "Funding Information: supported by the National Science Foundation Science and Technology Center, QUEST.",

year = "1992",

month = jul,

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language = "אנגלית",

volume = "53",

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AU - Garini, Y.

AU - Cohen, E.

AU - Ron, Arza

AU - Ehrenfreund, E.

AU - Law, K. K.

AU - Merz, J. L.

AU - Gossard, A. C.

N1 - Funding Information: supported by the National Science Foundation Science and Technology Center, QUEST.

PY - 1992/7

Y1 - 1992/7

N2 - We report on the study of Si-doped GaAs/AlGaAs narrow multiquantum wells (MQWs) using the intersubband photoinduced absorption technique. For the barrier-doped MQWs, we find thatan impurity level which is ∼ 60 meV below the barrier band gap, causes a photoinduced reduction ("bleaching") in the e1-e2 intersubband absorption. This is not observed for the MQWs doped in the well. For a Si-doped level of ∼ 2.5 ×1016 cm-3 (in the barriers), we estimate the density of the impurities causing the bleaching to be of the order of 2 ×108 cm-2 per barrier.

AB - We report on the study of Si-doped GaAs/AlGaAs narrow multiquantum wells (MQWs) using the intersubband photoinduced absorption technique. For the barrier-doped MQWs, we find thatan impurity level which is ∼ 60 meV below the barrier band gap, causes a photoinduced reduction ("bleaching") in the e1-e2 intersubband absorption. This is not observed for the MQWs doped in the well. For a Si-doped level of ∼ 2.5 ×1016 cm-3 (in the barriers), we estimate the density of the impurities causing the bleaching to be of the order of 2 ×108 cm-2 per barrier.

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Photoinduced intersubband absorption in n-doped quantum wells

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