Photoinduced intersubband absorption in barrier doped multi-quantum-wells

Y. Garini; M. Olszakier; E. Cohen; E. Ehrenfreund; Arza Ron; K. K. Law; J. L. Merz; A. C. Gossard

doi:10.1016/0749-6036(90)90211-o

Photoinduced intersubband absorption in barrier doped multi-quantum-wells

Y. Garini, M. Olszakier, E. Cohen, E. Ehrenfreund, Arza Ron, K. K. Law, J. L. Merz, A. C. Gossard

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Abstract

The intersubband absorption and its photomodulation by above barrier-gap excitation in a barrier n-doped GaAs/AlGaAs multiple quantum well structure are reported. The e1-e2 intersubband transition is observed as an absorption band centered at 149 meV and polarized along the growth axis. The photoinduced absorption measured at temperatures below 150K consists of two parts: a bleaching band at the low energy side of the e1-e2 absorption band, and an absorption band on its high energy side. The photoinduced bleaching below 149 meV is assigned to a reduction in the e1 electron population due to recombination with excess holes resulting from electrons captured by the barrier donors. The photoinduced absorption above 149 meV is probably due to the e1:hh1-e2:hh1 exciton absorption.

Original language	English
Pages (from-to)	287-290
Number of pages	4
Journal	Superlattices and Microstructures
Volume	7
Issue number	4
DOIs	https://doi.org/10.1016/0749-6036(90)90211-o
State	Published - 1990
Externally published	Yes

Bibliographical note

Funding Information:
In summary, we have presented absorption and photoinduced absorption measurements in barrier-doped MQW. We have found that the effect of the pump light is two fold: (a) a reduction in the low energy tail of the el-e2 absorption band due to a reduction in the el electrons, and (b) an enhancement of the high energy side of the el-e2 absorption band due possibly to intersub-band exciton absorption as observed earlier in undoped MQW.4. s Acknowledgments-The work at the Technion was supported by the US-Israel Binational Science Foundation (BSF), Jerusalem, Israel (grant No. 86600073) and by the Vice President Fund for the Promotion of Research. The laboratories are under the auspices of the Center for Advanced Opto-Electronics.

Funding

In summary, we have presented absorption and photoinduced absorption measurements in barrier-doped MQW. We have found that the effect of the pump light is two fold: (a) a reduction in the low energy tail of the el-e2 absorption band due to a reduction in the el electrons, and (b) an enhancement of the high energy side of the el-e2 absorption band due possibly to intersub-band exciton absorption as observed earlier in undoped MQW.4. s Acknowledgments-The work at the Technion was supported by the US-Israel Binational Science Foundation (BSF), Jerusalem, Israel (grant No. 86600073) and by the Vice President Fund for the Promotion of Research. The laboratories are under the auspices of the Center for Advanced Opto-Electronics.

Funders	Funder number
US-Israel Binational Science Foundation
Vice President Fund for the Promotion of Research
United States-Israel Binational Science Foundation	86600073

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@article{44b11dcfdc154a0eb462113fd17b052d,

title = "Photoinduced intersubband absorption in barrier doped multi-quantum-wells",

abstract = "The intersubband absorption and its photomodulation by above barrier-gap excitation in a barrier n-doped GaAs/AlGaAs multiple quantum well structure are reported. The e1-e2 intersubband transition is observed as an absorption band centered at 149 meV and polarized along the growth axis. The photoinduced absorption measured at temperatures below 150K consists of two parts: a bleaching band at the low energy side of the e1-e2 absorption band, and an absorption band on its high energy side. The photoinduced bleaching below 149 meV is assigned to a reduction in the e1 electron population due to recombination with excess holes resulting from electrons captured by the barrier donors. The photoinduced absorption above 149 meV is probably due to the e1:hh1-e2:hh1 exciton absorption.",

author = "Y. Garini and M. Olszakier and E. Cohen and E. Ehrenfreund and Arza Ron and Law, {K. K.} and Merz, {J. L.} and Gossard, {A. C.}",

note = "Funding Information: In summary, we have presented absorption and photoinduced absorption measurements in barrier-doped MQW. We have found that the effect of the pump light is two fold: (a) a reduction in the low energy tail of the el-e2 absorption band due to a reduction in the el electrons, and (b) an enhancement of the high energy side of the el-e2 absorption band due possibly to intersub-band exciton absorption as observed earlier in undoped MQW.4. s Acknowledgments-The work at the Technion was supported by the US-Israel Binational Science Foundation (BSF), Jerusalem, Israel (grant No. 86600073) and by the Vice President Fund for the Promotion of Research. The laboratories are under the auspices of the Center for Advanced Opto-Electronics.",

year = "1990",

doi = "10.1016/0749-6036(90)90211-o",

language = "אנגלית",

volume = "7",

pages = "287--290",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "4",

}

TY - JOUR

T1 - Photoinduced intersubband absorption in barrier doped multi-quantum-wells

AU - Garini, Y.

AU - Olszakier, M.

AU - Cohen, E.

AU - Ehrenfreund, E.

AU - Ron, Arza

AU - Law, K. K.

AU - Merz, J. L.

AU - Gossard, A. C.

N1 - Funding Information: In summary, we have presented absorption and photoinduced absorption measurements in barrier-doped MQW. We have found that the effect of the pump light is two fold: (a) a reduction in the low energy tail of the el-e2 absorption band due to a reduction in the el electrons, and (b) an enhancement of the high energy side of the el-e2 absorption band due possibly to intersub-band exciton absorption as observed earlier in undoped MQW.4. s Acknowledgments-The work at the Technion was supported by the US-Israel Binational Science Foundation (BSF), Jerusalem, Israel (grant No. 86600073) and by the Vice President Fund for the Promotion of Research. The laboratories are under the auspices of the Center for Advanced Opto-Electronics.

PY - 1990

Y1 - 1990

N2 - The intersubband absorption and its photomodulation by above barrier-gap excitation in a barrier n-doped GaAs/AlGaAs multiple quantum well structure are reported. The e1-e2 intersubband transition is observed as an absorption band centered at 149 meV and polarized along the growth axis. The photoinduced absorption measured at temperatures below 150K consists of two parts: a bleaching band at the low energy side of the e1-e2 absorption band, and an absorption band on its high energy side. The photoinduced bleaching below 149 meV is assigned to a reduction in the e1 electron population due to recombination with excess holes resulting from electrons captured by the barrier donors. The photoinduced absorption above 149 meV is probably due to the e1:hh1-e2:hh1 exciton absorption.

AB - The intersubband absorption and its photomodulation by above barrier-gap excitation in a barrier n-doped GaAs/AlGaAs multiple quantum well structure are reported. The e1-e2 intersubband transition is observed as an absorption band centered at 149 meV and polarized along the growth axis. The photoinduced absorption measured at temperatures below 150K consists of two parts: a bleaching band at the low energy side of the e1-e2 absorption band, and an absorption band on its high energy side. The photoinduced bleaching below 149 meV is assigned to a reduction in the e1 electron population due to recombination with excess holes resulting from electrons captured by the barrier donors. The photoinduced absorption above 149 meV is probably due to the e1:hh1-e2:hh1 exciton absorption.

UR - http://www.scopus.com/inward/record.url?scp=0025685816&partnerID=8YFLogxK

U2 - 10.1016/0749-6036(90)90211-o

DO - 10.1016/0749-6036(90)90211-o

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0025685816

SN - 0749-6036

VL - 7

SP - 287

EP - 290

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 4

ER -

Photoinduced intersubband absorption in barrier doped multi-quantum-wells

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