Abstract
Electrodes of n-CdSe0.65Te0.35 were prepared either by electroplating or by pasting of a slurry of the semiconductor. Analyses of spectral response measurements indicate that the high quantum efficiencies we obtained are probably due to the rather low doping of about 1015 cm-3. Diffusion lengths were found to be 0.1-0.5 μm, a result that is reflected in the moderate open-circuit voltages and fill factors obtained. Scanning electron microscopy shows very different morphologies for electrodes prepared by the two methods, but they showed similar efficiencies and electronic properties.
| Original language | English |
|---|---|
| Pages (from-to) | 349-356 |
| Number of pages | 8 |
| Journal | Thin Solid Films |
| Volume | 91 |
| Issue number | 4 |
| DOIs | |
| State | Published - 28 May 1982 |
| Externally published | Yes |