Photoelectrochemical Etching of 6H-SiC

Joseph S. Shor; Anthony D. Kurtz

doi:10.1149/1.2054810

Photoelectrochemical Etching of 6H-SiC

Joseph S. Shor, Anthony D. Kurtz

Kulite Semiconductor Products, Inc.

Research output: Contribution to journal › Article › peer-review

105 Scopus citations

Abstract

A new photoelectrochemical etching process is described for n-type 6H-SiC, while dark electrochemistry has been used to pattern p-type material. In this two-step etching process, the SIC is first anodized to form a deep porous layer, and this layer is subsequently removed by thermal oxidation followed by an HF dip. Etch rates as high as 4000 Å/min for n-SiC and 2.2 µm/min for p-SiC have been obtained during the anodization, resulting in near mirror-like etched surfaces.

Original language	English
Pages (from-to)	778-781
Number of pages	4
Journal	Journal of the Electrochemical Society
Volume	141
Issue number	3
DOIs	https://doi.org/10.1149/1.2054810
State	Published - Mar 1994
Externally published	Yes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/1.2054810

Cite this

@article{2501449135f64858a258a5788a29ee86,

title = "Photoelectrochemical Etching of 6H-SiC",

abstract = "A new photoelectrochemical etching process is described for n-type 6H-SiC, while dark electrochemistry has been used to pattern p-type material. In this two-step etching process, the SIC is first anodized to form a deep porous layer, and this layer is subsequently removed by thermal oxidation followed by an HF dip. Etch rates as high as 4000 {\AA}/min for n-SiC and 2.2 µm/min for p-SiC have been obtained during the anodization, resulting in near mirror-like etched surfaces.",

author = "Shor, \{Joseph S.\} and Kurtz, \{Anthony D.\}",

year = "1994",

month = mar,

doi = "10.1149/1.2054810",

language = "אנגלית",

volume = "141",

pages = "778--781",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Photoelectrochemical Etching of 6H-SiC

AU - Shor, Joseph S.

AU - Kurtz, Anthony D.

PY - 1994/3

Y1 - 1994/3

N2 - A new photoelectrochemical etching process is described for n-type 6H-SiC, while dark electrochemistry has been used to pattern p-type material. In this two-step etching process, the SIC is first anodized to form a deep porous layer, and this layer is subsequently removed by thermal oxidation followed by an HF dip. Etch rates as high as 4000 Å/min for n-SiC and 2.2 µm/min for p-SiC have been obtained during the anodization, resulting in near mirror-like etched surfaces.

AB - A new photoelectrochemical etching process is described for n-type 6H-SiC, while dark electrochemistry has been used to pattern p-type material. In this two-step etching process, the SIC is first anodized to form a deep porous layer, and this layer is subsequently removed by thermal oxidation followed by an HF dip. Etch rates as high as 4000 Å/min for n-SiC and 2.2 µm/min for p-SiC have been obtained during the anodization, resulting in near mirror-like etched surfaces.

UR - https://www.scopus.com/pages/publications/0028388084

U2 - 10.1149/1.2054810

DO - 10.1149/1.2054810

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0028388084

SN - 0013-4651

VL - 141

SP - 778

EP - 781

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 3

ER -

Photoelectrochemical Etching of 6H-SiC

Abstract

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this