Photoelectrochemical Etching of 6H-SiC

Joseph S. Shor, Anthony D. Kurtz

Research output: Contribution to journalArticlepeer-review

102 Scopus citations


A new photoelectrochemical etching process is described for n-type 6H-SiC, while dark electrochemistry has been used to pattern p-type material. In this two-step etching process, the SIC is first anodized to form a deep porous layer, and this layer is subsequently removed by thermal oxidation followed by an HF dip. Etch rates as high as 4000 Å/min for n-SiC and 2.2 µm/min for p-SiC have been obtained during the anodization, resulting in near mirror-like etched surfaces.

Original languageEnglish
Pages (from-to)778-781
Number of pages4
JournalJournal of the Electrochemical Society
Issue number3
StatePublished - Mar 1994
Externally publishedYes


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