Photoelectrochemical Etching of 6H-SiC

Joseph S. Shor; Anthony D. Kurtz

doi:10.1149/1.2054810

Photoelectrochemical Etching of 6H-SiC

Joseph S. Shor, Anthony D. Kurtz

Kulite Semiconductor Products, Inc.

Research output: Contribution to journal › Article › peer-review

102 Scopus citations

Abstract

A new photoelectrochemical etching process is described for n-type 6H-SiC, while dark electrochemistry has been used to pattern p-type material. In this two-step etching process, the SIC is first anodized to form a deep porous layer, and this layer is subsequently removed by thermal oxidation followed by an HF dip. Etch rates as high as 4000 Å/min for n-SiC and 2.2 µm/min for p-SiC have been obtained during the anodization, resulting in near mirror-like etched surfaces.

Original language	English
Pages (from-to)	778-781
Number of pages	4
Journal	Journal of the Electrochemical Society
Volume	141
Issue number	3
DOIs	https://doi.org/10.1149/1.2054810
State	Published - Mar 1994
Externally published	Yes

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10.1149/1.2054810

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abstract = "A new photoelectrochemical etching process is described for n-type 6H-SiC, while dark electrochemistry has been used to pattern p-type material. In this two-step etching process, the SIC is first anodized to form a deep porous layer, and this layer is subsequently removed by thermal oxidation followed by an HF dip. Etch rates as high as 4000 {\AA}/min for n-SiC and 2.2 µm/min for p-SiC have been obtained during the anodization, resulting in near mirror-like etched surfaces.",

author = "Shor, {Joseph S.} and Kurtz, {Anthony D.}",

year = "1994",

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AB - A new photoelectrochemical etching process is described for n-type 6H-SiC, while dark electrochemistry has been used to pattern p-type material. In this two-step etching process, the SIC is first anodized to form a deep porous layer, and this layer is subsequently removed by thermal oxidation followed by an HF dip. Etch rates as high as 4000 Å/min for n-SiC and 2.2 µm/min for p-SiC have been obtained during the anodization, resulting in near mirror-like etched surfaces.

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Photoelectrochemical Etching of 6H-SiC

Abstract

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