Abstract
A new photoelectrochemical etching process is described for n‐type Formula , while dark electrochemistry has been used to pattern p‐type material. In this two‐step etching process, the Formula is first anodized to form a deep porous layer, and this layer is subsequently removed by thermal oxidation followed by an Formula dip. Etch rates as high as 4000 Å/min for Formula and 2.2 μm/min for Formula have been obtained during the anodization, resulting in near mirror‐like etched surfaces.
| Original language | American English |
|---|---|
| Title of host publication | Fifth International Conference on SiC and Related Materials |
| Publisher | Journal of the Electrochemical Society |
| State | Published - 1993 |