Photoelectrochemical Etching and Etch-Stops in 6H-SiC

J. Shor, Anthony D. Kurtz

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


A new photoelectrochemical etching process is described for n‐type Formula , while dark electrochemistry has been used to pattern p‐type material. In this two‐step etching process, the Formula is first anodized to form a deep porous layer, and this layer is subsequently removed by thermal oxidation followed by an Formula dip. Etch rates as high as 4000 Å/min for Formula and 2.2 μm/min for Formula have been obtained during the anodization, resulting in near mirror‐like etched surfaces.
Original languageAmerican English
Title of host publicationFifth International Conference on SiC and Related Materials
PublisherJournal of the Electrochemical Society
StatePublished - 1993

Bibliographical note

Place of conference:USA


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