A new photoelectrochemical etching process is described for n‐type Formula , while dark electrochemistry has been used to pattern p‐type material. In this two‐step etching process, the Formula is first anodized to form a deep porous layer, and this layer is subsequently removed by thermal oxidation followed by an Formula dip. Etch rates as high as 4000 Å/min for Formula and 2.2 μm/min for Formula have been obtained during the anodization, resulting in near mirror‐like etched surfaces.
|Original language||American English|
|Title of host publication||Fifth International Conference on SiC and Related Materials|
|Publisher||Journal of the Electrochemical Society|
|State||Published - 1993|