Photoelectrochemical Etching and Dopant Selective Etch-Stops in SiC

J. Shor, X. G Zhang, A. D Kurtz, R. M Osgood Jr

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A new photoelectrochemical (PEC) etching technique has been developed which will enhance the processing capability of device structures in SiC. Using PEC etching, etch rates as high as 100 µm/min have been achieved, which are the highest reported thus far for any room temperature SiC etch. In addition, it is possible to implement electrochemical etch stops in SiC pn-junctions such that the n-type layer may be removed rapidly, while the p-type substrate underneath remains completely inert. PEC etching is also very easily controlled and results in high aspect ratio structures. This process is useful for the fabrication of electromechanical sensors, Mesa structures, and Bipolar and CMOS devices.
Original languageAmerican English
Title of host publicationAmorphous and Crystalline Silicon Carbide IV
PublisherSpringer Berlin Heidelberg
StatePublished - 1992

Bibliographical note

Place of conference:USA

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