Photoelectrochemical conductivity selective etch stops for SiC

J. S. Shor, R. M. Osgood, A. D. Kurtz

Research output: Contribution to journalArticlepeer-review

23 Scopus citations


Recent advances in SiC technology have demonstrated that the material is a potentially useful semiconductor for high temperature and high frequency applications. However, unlike silicon and GaAs, SiC is chemically inert, thus limiting the amount of etchants that can be effectively used to pattern devices. In fact, no patterning technique has been reported to date for SiC which shows high selectivity between p- and n-type material. In this letter, we will show how an n-type SiC epilayer can be patterned using photoelectrochemical etching, while a p-type substrate underneath acts as an etch stop. This process is useful for the fabrication of electromechanical transducers, mesa structures, and bipolar and CMOS devices in SiC.

Original languageEnglish
Pages (from-to)1001-1003
Number of pages3
JournalApplied Physics Letters
Issue number8
StatePublished - 1992
Externally publishedYes


Dive into the research topics of 'Photoelectrochemical conductivity selective etch stops for SiC'. Together they form a unique fingerprint.

Cite this