Photoelectrochemical characterization of CuGaSe2 and Cu(Ga,In)Se2 films and defect chemical implications for solar cell performance

David Cahen; Anna Kisilev; Victor Marcu; Hans W. Schock; Rommel Noufi

Photoelectrochemical characterization of CuGaSe₂ and Cu(Ga,In)Se₂ films and defect chemical implications for solar cell performance

David Cahen, Anna Kisilev, Victor Marcu, Hans W. Schock, Rommel Noufi

Weizmann Institute of Science

Research output: Contribution to journal › Conference article › peer-review

9 Scopus citations

Abstract

The effective electronic parameters and the optical bandgap of CuGaSe₂ and Cu(Ga,In)Se₂ films were determined by using an organic liquid electrolyte to form a Schottky barrier to the films. Trends in the electronic parameters, composition, and additional information were used in a defect chemical framework to explore the effects of Ga substitution/doping on CuInSe₂. Values for optical and (effective) electronic parameters for several CuGaSe₂ films are reported. Photocurrent-wavelength data are also shown. In CuGaSe₂ (as in CuInSe₂), film stoichiometry needs to be reasonably well controlled, close to Cu/Ga = 1, according to the results.

Original language	English
Pages (from-to)	1437-1442
Number of pages	6
Journal	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	2
State	Published - 1988
Externally published	Yes
Event	Twentieth IEEE Photovoltaic Specialists Conference - 1988 - Las Vegas, NV, USA Duration: 26 Sep 1988 → 30 Sep 1988

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@article{c0b941e034954262aa40446f1fd05bb2,

title = "Photoelectrochemical characterization of CuGaSe2 and Cu(Ga,In)Se2 films and defect chemical implications for solar cell performance",

abstract = "The effective electronic parameters and the optical bandgap of CuGaSe2 and Cu(Ga,In)Se2 films were determined by using an organic liquid electrolyte to form a Schottky barrier to the films. Trends in the electronic parameters, composition, and additional information were used in a defect chemical framework to explore the effects of Ga substitution/doping on CuInSe2. Values for optical and (effective) electronic parameters for several CuGaSe2 films are reported. Photocurrent-wavelength data are also shown. In CuGaSe2 (as in CuInSe2), film stoichiometry needs to be reasonably well controlled, close to Cu/Ga = 1, according to the results.",

author = "David Cahen and Anna Kisilev and Victor Marcu and Schock, {Hans W.} and Rommel Noufi",

year = "1988",

language = "אנגלית",

volume = "2",

pages = "1437--1442",

journal = "Conference Record of the IEEE Photovoltaic Specialists Conference",

issn = "0160-8371",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Twentieth IEEE Photovoltaic Specialists Conference - 1988 ; Conference date: 26-09-1988 Through 30-09-1988",

}

TY - JOUR

T1 - Photoelectrochemical characterization of CuGaSe2 and Cu(Ga,In)Se2 films and defect chemical implications for solar cell performance

AU - Cahen, David

AU - Kisilev, Anna

AU - Marcu, Victor

AU - Schock, Hans W.

AU - Noufi, Rommel

PY - 1988

Y1 - 1988

N2 - The effective electronic parameters and the optical bandgap of CuGaSe2 and Cu(Ga,In)Se2 films were determined by using an organic liquid electrolyte to form a Schottky barrier to the films. Trends in the electronic parameters, composition, and additional information were used in a defect chemical framework to explore the effects of Ga substitution/doping on CuInSe2. Values for optical and (effective) electronic parameters for several CuGaSe2 films are reported. Photocurrent-wavelength data are also shown. In CuGaSe2 (as in CuInSe2), film stoichiometry needs to be reasonably well controlled, close to Cu/Ga = 1, according to the results.

AB - The effective electronic parameters and the optical bandgap of CuGaSe2 and Cu(Ga,In)Se2 films were determined by using an organic liquid electrolyte to form a Schottky barrier to the films. Trends in the electronic parameters, composition, and additional information were used in a defect chemical framework to explore the effects of Ga substitution/doping on CuInSe2. Values for optical and (effective) electronic parameters for several CuGaSe2 films are reported. Photocurrent-wavelength data are also shown. In CuGaSe2 (as in CuInSe2), film stoichiometry needs to be reasonably well controlled, close to Cu/Ga = 1, according to the results.

UR - http://www.scopus.com/inward/record.url?scp=0024186350&partnerID=8YFLogxK

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.conferencearticle???

AN - SCOPUS:0024186350

SN - 0160-8371

VL - 2

SP - 1437

EP - 1442

JO - Conference Record of the IEEE Photovoltaic Specialists Conference

JF - Conference Record of the IEEE Photovoltaic Specialists Conference

T2 - Twentieth IEEE Photovoltaic Specialists Conference - 1988

Y2 - 26 September 1988 through 30 September 1988

ER -

Photoelectrochemical characterization of CuGaSe₂ and Cu(Ga,In)Se₂ films and defect chemical implications for solar cell performance

Abstract

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