Photocurrent spectroscopy of intersubband transitions in GaInAsN/(Al)GaAs asymmetric quantum well infrared photodetectors

Asaf Albo; Dan Fekete; Gad Bahir

doi:10.1063/1.4754573

Photocurrent spectroscopy of intersubband transitions in GaInAsN/(Al)GaAs asymmetric quantum well infrared photodetectors

Asaf Albo, Dan Fekete, Gad Bahir

Technion-Israel Institute of Technology

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7 Scopus citations

Abstract

We have studied the conduction band electronic level structure of GaInAsN/(Al)GaAs-based quantum well (QW) infrared photodetectors using intersubband photocurrent (PC) spectroscopy and dark current analysis. Photoluminescence and intersubband absorption were carried out as complementary spectroscopic techniques. Based on the observed transition energy, we associated the photocurrent peaks with electron excitations from bound states in the quantum wells to quasi-bound states in the continuum. A good agreement with the experimental results was obtained using a 10-band k · p model that took into account the inhomogeneous distribution of nitrogen atoms along the quantum wells growth direction.

Original language	English
Article number	084502
Journal	Journal of Applied Physics
Volume	112
Issue number	8
DOIs	https://doi.org/10.1063/1.4754573
State	Published - 15 Oct 2012
Externally published	Yes

Bibliographical note

Funding Information:
This work was supported in part by the Technion-Russell-Berrie Nanotechnology Institute under Grant No. 2009101.

Funding

This work was supported in part by the Technion-Russell-Berrie Nanotechnology Institute under Grant No. 2009101.

Funders	Funder number
Technion-Russell-Berrie Nanotechnology Institute	2009101

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abstract = "We have studied the conduction band electronic level structure of GaInAsN/(Al)GaAs-based quantum well (QW) infrared photodetectors using intersubband photocurrent (PC) spectroscopy and dark current analysis. Photoluminescence and intersubband absorption were carried out as complementary spectroscopic techniques. Based on the observed transition energy, we associated the photocurrent peaks with electron excitations from bound states in the quantum wells to quasi-bound states in the continuum. A good agreement with the experimental results was obtained using a 10-band k · p model that took into account the inhomogeneous distribution of nitrogen atoms along the quantum wells growth direction.",

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AU - Fekete, Dan

AU - Bahir, Gad

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PY - 2012/10/15

Y1 - 2012/10/15

N2 - We have studied the conduction band electronic level structure of GaInAsN/(Al)GaAs-based quantum well (QW) infrared photodetectors using intersubband photocurrent (PC) spectroscopy and dark current analysis. Photoluminescence and intersubband absorption were carried out as complementary spectroscopic techniques. Based on the observed transition energy, we associated the photocurrent peaks with electron excitations from bound states in the quantum wells to quasi-bound states in the continuum. A good agreement with the experimental results was obtained using a 10-band k · p model that took into account the inhomogeneous distribution of nitrogen atoms along the quantum wells growth direction.

AB - We have studied the conduction band electronic level structure of GaInAsN/(Al)GaAs-based quantum well (QW) infrared photodetectors using intersubband photocurrent (PC) spectroscopy and dark current analysis. Photoluminescence and intersubband absorption were carried out as complementary spectroscopic techniques. Based on the observed transition energy, we associated the photocurrent peaks with electron excitations from bound states in the quantum wells to quasi-bound states in the continuum. A good agreement with the experimental results was obtained using a 10-band k · p model that took into account the inhomogeneous distribution of nitrogen atoms along the quantum wells growth direction.

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Photocurrent spectroscopy of intersubband transitions in GaInAsN/(Al)GaAs asymmetric quantum well infrared photodetectors

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