Photoconductivity decay model in a-Si: H at low temperatures

A. A. Andreev; A. V. Zherzdev; A. I. Kosarev; K. V. Koughia; I. S. Shlimak

doi:10.1016/0038-1098(84)90884-6

Photoconductivity decay model in a-Si: H at low temperatures

A. A. Andreev
, A. V. Zherzdev
, A. I. Kosarev
, K. V. Koughia
, I. S. Shlimak

RAS - Ioffe Physico Technical Institute

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Photoconductivity decay from steady-state level can be explained in terms of tunnel recombination through randomly distributed localized states in mobility gap. The calculations shows a good agreement between experiment and theory in the range of several orders of magnitude.

Original language	English
Pages (from-to)	589-591
Number of pages	3
Journal	Solid State Communications
Volume	52
Issue number	6
DOIs	https://doi.org/10.1016/0038-1098(84)90884-6
State	Published - Nov 1984
Externally published	Yes

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@article{b35c31c359ff426292659c3085e24e31,

title = "Photoconductivity decay model in a-Si: H at low temperatures",

abstract = "Photoconductivity decay from steady-state level can be explained in terms of tunnel recombination through randomly distributed localized states in mobility gap. The calculations shows a good agreement between experiment and theory in the range of several orders of magnitude.",

author = "Andreev, \{A. A.\} and Zherzdev, \{A. V.\} and Kosarev, \{A. I.\} and Koughia, \{K. V.\} and Shlimak, \{I. S.\}",

year = "1984",

month = nov,

doi = "10.1016/0038-1098(84)90884-6",

language = "אנגלית",

volume = "52",

pages = "589--591",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd.",

number = "6",

}

TY - JOUR

T1 - Photoconductivity decay model in a-Si

T2 - H at low temperatures

AU - Andreev, A. A.

AU - Zherzdev, A. V.

AU - Kosarev, A. I.

AU - Koughia, K. V.

AU - Shlimak, I. S.

PY - 1984/11

Y1 - 1984/11

N2 - Photoconductivity decay from steady-state level can be explained in terms of tunnel recombination through randomly distributed localized states in mobility gap. The calculations shows a good agreement between experiment and theory in the range of several orders of magnitude.

AB - Photoconductivity decay from steady-state level can be explained in terms of tunnel recombination through randomly distributed localized states in mobility gap. The calculations shows a good agreement between experiment and theory in the range of several orders of magnitude.

UR - https://www.scopus.com/pages/publications/0021517231

U2 - 10.1016/0038-1098(84)90884-6

DO - 10.1016/0038-1098(84)90884-6

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0021517231

SN - 0038-1098

VL - 52

SP - 589

EP - 591

JO - Solid State Communications

JF - Solid State Communications

IS - 6

ER -

Photoconductivity decay model in a-Si: H at low temperatures

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