Photoconductivity decay model in a-Si: H at low temperatures

A. A. Andreev; A. V. Zherzdev; A. I. Kosarev; K. V. Koughia; I. S. Shlimak

doi:10.1016/0038-1098(84)90884-6

Photoconductivity decay model in a-Si: H at low temperatures

A. A. Andreev, A. V. Zherzdev, A. I. Kosarev, K. V. Koughia, I. S. Shlimak

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12 Scopus citations

Abstract

Photoconductivity decay from steady-state level can be explained in terms of tunnel recombination through randomly distributed localized states in mobility gap. The calculations shows a good agreement between experiment and theory in the range of several orders of magnitude.

Original language	English
Pages (from-to)	589-591
Number of pages	3
Journal	Solid State Communications
Volume	52
Issue number	6
DOIs	https://doi.org/10.1016/0038-1098(84)90884-6
State	Published - Nov 1984
Externally published	Yes

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title = "Photoconductivity decay model in a-Si: H at low temperatures",

abstract = "Photoconductivity decay from steady-state level can be explained in terms of tunnel recombination through randomly distributed localized states in mobility gap. The calculations shows a good agreement between experiment and theory in the range of several orders of magnitude.",

author = "Andreev, {A. A.} and Zherzdev, {A. V.} and Kosarev, {A. I.} and Koughia, {K. V.} and Shlimak, {I. S.}",

year = "1984",

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AU - Andreev, A. A.

AU - Zherzdev, A. V.

AU - Kosarev, A. I.

AU - Koughia, K. V.

AU - Shlimak, I. S.

PY - 1984/11

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JO - Solid State Communications

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Photoconductivity decay model in a-Si: H at low temperatures

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