Photoconductivity decay model in a-Si: H at low temperatures

A. A. Andreev, A. V. Zherzdev, A. I. Kosarev, K. V. Koughia, I. S. Shlimak

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


Photoconductivity decay from steady-state level can be explained in terms of tunnel recombination through randomly distributed localized states in mobility gap. The calculations shows a good agreement between experiment and theory in the range of several orders of magnitude.

Original languageEnglish
Pages (from-to)589-591
Number of pages3
JournalSolid State Communications
Issue number6
StatePublished - Nov 1984
Externally publishedYes


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